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BUZ30AH

Description
SIPMOS Power Transistor
CategoryDiscrete semiconductor    The transistor   
File Size316KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BUZ30AH Overview

SIPMOS Power Transistor

BUZ30AH Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)450 mJ
ConfigurationSINGLE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)21 A
Maximum drain current (ID)21 A
Maximum drain-source on-resistance0.13 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
Maximum pulsed drain current (IDM)84 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
SIPMOS
®
Power Transistor
BUZ 30A
H
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
I
D
R
DS(on
)
Package
Pb-free
BUZ 30A
H
200 V
21 A
0.13
PG-TO-220-3
Yes
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
I
D
21
A
T
C
= 26 ˚C
Pulsed drain current
I
Dpuls
84
T
C
= 25 ˚C
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by
T
jmax
Avalanche energy, single pulse
I
AR
E
AR
E
AS
21
12
mJ
I
D
= 21 A,
V
DD
= 50 V,
R
GS
= 25
L
= 1.53 mH,
T
j
= 25 ˚C
Gate source voltage
Power dissipation
450
V
GS
P
tot
±
20
125
V
W
T
C
= 25 ˚C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJA
-55 ... + 150
-55 ... + 150
˚C
1
75
E
K/W
55 / 150 / 56
Rev. 2.5
Page 1
2010-07-02
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