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BT139-600E/DG

Description
4 Quadrant Logic Level TRIAC, 600V V(DRM), 16A I(T)RMS, TO-220AB, PLASTIC, SC-46, 3 PIN
CategoryAnalog mixed-signal IC    Trigger device   
File Size264KB,14 Pages
ManufacturerWeEn Semiconductors
Download Datasheet Parametric Compare View All

BT139-600E/DG Overview

4 Quadrant Logic Level TRIAC, 600V V(DRM), 16A I(T)RMS, TO-220AB, PLASTIC, SC-46, 3 PIN

BT139-600E/DG Parametric

Parameter NameAttribute value
MakerWeEn Semiconductors
package instructionPLASTIC, SC-46, 3 PIN
Reach Compliance Codeunknown
Other featuresSENSITIVE GATE
Shell connectionMAIN TERMINAL 2
ConfigurationSINGLE
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum rms on-state current16 A
GuidelineIEC-60134
Off-state repetitive peak voltage600 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Trigger device type4 QUADRANT LOGIC LEVEL TRIAC

BT139-600E/DG Preview

IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT139-600E
4Q Triac
27 September 2013
Product data sheet
1. General description
Planar passivated sensitive gate four quadrant triac in a SOT78 (TO-220AB) plastic
package intended for use in applications requiring high bidirectional transient and
blocking voltage capability and high thermal cycling performance. Typical applications
include motor control, industrial and domestic lighting, heating and static switching. This
sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers,
logic integrated circuits and other low power gate trigger circuits.
2. Features and benefits
Direct triggering from low power drivers and logic ICs
High blocking voltage capability
Planar passivated for voltage ruggedness and reliability
Sensitive gate
Triggering in all four quadrants
3. Applications
General purpose motor control
General purpose switching
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
mb
≤ 99 °C;
Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
-
4
10
mA
-
2.5
10
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
600
155
16
Unit
V
A
A
Scan or click this QR code to view the latest information for this product
TO
-2
20A
B
NXP Semiconductors
BT139-600E
4Q Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
Min
-
-
Typ
5
11
Max
10
25
Unit
mA
mA
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220AB (SOT78)
6. Ordering information
Table 3.
Ordering information
Package
Name
BT139-600E
BT139-600E/DG
TO-220AB
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
SOT78
Type number
BT139-600E
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
27 September 2013
2 / 13
NXP Semiconductors
BT139-600E
4Q Triac
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
mb
≤ 99 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
2
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Max
600
16
155
170
120
50
50
50
10
2
5
0.5
150
125
Unit
V
A
A
A
2
I2t for fusing
rate of rise of on-state current
t
p
= 10 ms; SIN
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G+
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G-
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G-
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G+
A s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
I
GM
P
GM
P
G(AV)
T
stg
T
j
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
-
-40
-
BT139-600E
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
27 September 2013
3 / 13
NXP Semiconductors
BT139-600E
4Q Triac
50
I
T(RMS)
(A)
40
001aab090
20
I
T(RMS)
(A)
15
001aab091
(1)
30
10
20
5
10
0
10
- 2
10
- 1
1
10
surge duration (s)
0
- 50
0
50
100
T
mb
(°C)
150
f = 50 Hz; T
mb
= 99 °C
Fig. 1.
RMS on-state current as a function of surge
duration; maximum values
25
P
tot
(W)
20
(1) T
mb
= 99 °C
Fig. 2.
RMS on-state current as a function of mounting
base temperature; maximum values
001aab093
95
T
mb(max)
(°C)
101
α=
180
120
90
15
60
30
107
10
α
113
5
α
119
0
0
5
10
15
I
T(RMS)
(A)
125
20
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values.
BT139-600E
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
27 September 2013
4 / 13

BT139-600E/DG Related Products

BT139-600E/DG BT139-600E
Description 4 Quadrant Logic Level TRIAC, 600V V(DRM), 16A I(T)RMS, TO-220AB, PLASTIC, SC-46, 3 PIN 4 Quadrant Logic Level TRIAC, 600V V(DRM), 16A I(T)RMS, TO-220AB, PLASTIC, SC-46, 3 PIN
Maker WeEn Semiconductors WeEn Semiconductors
package instruction PLASTIC, SC-46, 3 PIN SC-46, 3 PIN
Reach Compliance Code unknown unknown
Other features SENSITIVE GATE SENSITIVE GATE
Shell connection MAIN TERMINAL 2 MAIN TERMINAL 2
Configuration SINGLE SINGLE
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 125 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified
Maximum rms on-state current 16 A 16 A
Guideline IEC-60134 IEC-60134
Off-state repetitive peak voltage 600 V 600 V
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Trigger device type 4 QUADRANT LOGIC LEVEL TRIAC 4 QUADRANT LOGIC LEVEL TRIAC
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