MITSUBISHI SEMICONDUCTOR <TRIAC> >
MITSUBISHI SEMICONDUCTOR <TRIAC
BCR08AM
BCR08AM
LOW POWER USE
LOW POWER USE
PLANAR PASSIVATION TYPE
PLANAR PASSIVATION TYPE
BCR08AM
OUTLINE DRAWING
φ5.0
MAX.
Dimensions
in mm
➁
➂
VOLTAGE
CLASS
TYPE
NAME
➀
T
1
TERMINAL
➁
T
2
TERMINAL
➂
GATE TERMINAL
CIRCUMSCRIBE
CIRCLE
φ0.7
1.25 1.25
1.3
12.5 MIN.
➀
5.0 MAX.
0.8
8
0.26
1
0.1
6
0.5
0.23
➀ ➂ ➁
• I
T (RMS)
..................................................................... 0.8A
• V
DRM
....................................................................... 600V
• I
RGT I
, I
RGT III
............................................................ 5mA
APPLICATION
Electric fan, air cleaner, other general purpose control applications
JEDEC : TO-92
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
½1
Non-repetitive peak off-state
voltage
½1
Voltage class
12
600
720
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Typical value
Conditions
Commercial frequency, sine full wave 360° conduction, T
c
=56°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ratings
–40 ~ +125
–40 ~ +125
3.9 MAX.
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
½1.
Gate open.
Mar. 2002
MITSUBISHI SEMICONDUCTOR <TRIAC>
BCR08AM
LOW POWER USE
PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I
DRM
V
TM
V
RGT I
V
RGT III
I
RGT I
I
RGT III
V
GD
R
th (j-c)
(dv/dt)
c
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
½2
Gate trigger current
½2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
½4
Test conditions
T
j
=125°C, V
DRM
applied
T
c
=25°C, I
TM
=1.2A, Instantaneous measurement
II
III
II
III
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
T
j
=125°C, V
D
=1/2V
DRM
Junction to
T
j
=125°C
case
½3
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
Min.
—
—
—
—
—
—
0.1
—
0.5
Typ.
—
—
—
—
—
—
—
—
—
Max.
1.0
2.0
2.0
2.0
5
5
—
60
—
Unit
mA
V
V
V
mA
mA
V
°C/
W
V/µs
½2.
Measurment using the gate trigger characteristics measurement circuit.
½3.
Case temperature is measured at the T
2
terminal 1.5mm away from the molded case.
½4.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
Commutating voltage and current waveforms
(inductive load)
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
TIME
V
D
TIME
1. Junction temperature
T
j
=125°C
2. Rate of decay of on-state commutating current
(di/dt)
c
=–0.4A/ms
3. Peak off-state voltage
V
D
=400V
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
10
1
7
T
c
= 25°C
5
3
2
10
0
7
5
3
2
10
–1
1.0
RATED SURGE ON-STATE CURRENT
10
SURGE ON-STATE CURRENT (A)
9
8
7
6
5
4
3
2
1
0
10
0
2 3
5 7 10
1
2 3
5 7 10
2
ON-STATE CURRENT (A)
1.5
2.0
2.5
3.0
3.5
4.0
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI SEMICONDUCTOR <TRIAC>
BCR08AM
LOW POWER USE
PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
100 (%)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
3
2
10
2
7
5
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
3
2
GATE VOLTAGE (V)
V
GT
10
0
7
5
3
2
10
–1
7
5
3
P
G(AV)
=
0.1W
I
GM
=
0.5A
I
RGT I
I
RGT III
V
GD
= 0.1V
3 5 7 10
1
2 3
5 7 10
2
2 3
5 710
3
GATE CURRENT (mA)
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
10
1
7
5
3
2
V
GM
= 6V
P
GM
= 1W
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
TRANSIENT THERMAL IMPEDANCE (°C/W)
10
3
7
5
3
2
10
2
7
5
3
2
10
2
2 3 5 7 10
3
2 3 5 7 10
4
2 3 5 710
5
3
2
JUNCTION TO AMBIENT
10
2
7
5
3
2
10
1
7
5
3
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
JUNCTION TO CASE
TYPICAL EXAMPLE
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CASE TEMPERATURE (°C)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
0.8
1.0
1.2
1.4
140
120
100
80
60
40
20
0
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
Mar. 2002
MITSUBISHI SEMICONDUCTOR <TRIAC>
BCR08AM
LOW POWER USE
PLANAR PASSIVATION TYPE
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
140
NATURAL CONVECTION
NO FINS
120
100
80
60
40
20
0
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
100 (%)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10
5
7 TYPICAL EXAMPLE
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RMS ON-STATE CURRENT (A)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
3
2
10
2
7
5
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
LACHING CURRENT (mA)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
DISTRIBUTION
+
T
2
, G
–
TYPICAL EXAMPLE
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
100 (%)
–
T
2
, G
–
TYPICAL EXAMPLE
10
–1
–40
0
40
80
120
160
JUNCTION TEMPERATURE (°C)
100 (%)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
140
TYPICAL EXAMPLE
T
j
= 125°C
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
120
100
80
60
40
III QUADRANT
20
0
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
I QUADRANT
Mar. 2002
MITSUBISHI SEMICONDUCTOR <TRIAC>
BCR08AM
LOW POWER USE
PLANAR PASSIVATION TYPE
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
COMMUTATION CHARACTERISTICS
10
1
7 TYPICAL EXAMPLE
5
3
2
10
0
7
5
3
2
10
–1
10
–1
2
MINIMUM
CHARAC-
TERISTICS
VALUE
3
5 7 10
0
CONDITIONS
V
D
= 200V
I
T
= 1A
τ
= 500µs
T
j
= 125°C
10
3
7
5
100 (%)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
TYPICAL EXAMPLE
I
RGT I
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
3
2
10
2
7
5
3
2
10
1 0
10
2 3
I
RGT III
III QUADRANT
I QUADRANT
2
3
5 7 10
1
5 7 10
1
2 3
5 7 10
2
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE CURRENT PULSE WIDTH (µs)
GATE TRIGGER CHARACTERISTICS
TEST CIRCUITS
6Ω
6Ω
6V
V
A
R
G
6V
V
A
R
G
TEST PROCEDURE II
TEST PROCEDURE III
Mar. 2002
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