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D1050N

Description
1650 A, 800 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size238KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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D1050N Overview

1650 A, 800 V, SILICON, RECTIFIER DIODE

N
Netz-Gleichrichterdiode
Rectifier Diode
Datenblatt / Data sheet
D1050N
T
vj
= -40°C... T
vj max
V
RRM
I
FRMSM
T
C
= 130 °C
T
C
= 55 °C,
θ
= 180°sin, t
P
= 10 ms
I
FAVM
I
FAVM
I
FRMS
T
vj
=25 °C, t
P
= 10 ms
T
vj
= T
vj max
t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I
FSM
I²t
1200
1400
1600 V
1800 V
2590 A
1050 A
2000 A
3140 A
24000 A
18500 A
2880 10³A²s
1710 10³A²s
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / maximum rated values
Periodische Spitzensperrspannung
Kenndaten
repetitive peak reverse voltages
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Dauergrenzstrom
average on-state current
Durchlaßstrom-Effektivwert
RMS on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie
500 A
i
F
5000 A
on-state characteristic
Elektrische Eigenschaften
T
vj
= T
vj max
, i
F
= 5,0 kA
T
vj
= T
vj max
, i
F
= 1,0 kA
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
v
F
V
(TO)
r
T
A=
B=
C=
D=
i
R
max.
max.
1,76 V
1,00 V
0,81 V
0,17 mΩ
v
F
=
A
+
B
i
F
+
C
ln ( i
F
+
1 )
+
D
Sperrstrom
reverse current
i
F
T
vj
= T
vj max
, v
R
= V
RRM
-6,685E-01
2,114E-04
2,752E-01
-1,385E-02
max.
60 mA
Thermische Eigenschaften
Kühlfläche / cooling surface
beidseitig / two-sided,
θ
= 180°sin
beidseitig / two-sided, DC
Anode / anode,
θ
= 180°sin
Anode / anode, DC
Kathode / cathode,
θ
= 180°sin
Kathode / cathode, DC
Kühlfläche / cooling surface
beidseitig / two-sided
einseitig / single-sided
R
thJC
max.
max.
max.
max.
max.
max.
max.
max.
0,038
0,035
0,064
0,061
0,085
0,082
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
R
thCH
0,005 °C/W
0,010 °C/W
180 °C
T
vj max
T
c op
T
stg
-40...+180 °C
-40...+180 °C
prepared by: H.Sandmann
approved by: M.Leifeld
date of publication:
revision:
2009-06-16
2
IFBIP D AEC / 2009-02-27 / H.Sandmann
A 02/09
Seite/page
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