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FD200R65KF2-K

Description
IGBT-Module
CategoryDiscrete semiconductor    The transistor   
File Size284KB,12 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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FD200R65KF2-K Overview

IGBT-Module

FD200R65KF2-K Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
Parts packaging codeMODULE
package instructionMODULE-7
Contacts7
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)1000 A
Collector-emitter maximum voltage6300 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X7
Number of components1
Number of terminals7
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)3800 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)6500 ns
Nominal on time (ton)1120 ns
VCEsat-Max4.9 V
Base Number Matches1
Technische Information / technical information
IGBT-Module
IGBT-modules
FD200R65KF2-K
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