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BUX11CECC

Description
Power Bipolar Transistor, 20A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size194KB,3 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric Compare View All

BUX11CECC Overview

Power Bipolar Transistor, 20A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

BUX11CECC Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerTT Electronics plc
package instructionTO-3, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)20 A
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
GuidelineCECC
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)8 MHz
SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUX11
High Current Capability.
Hermetic TO3 Metal package.
Designed For Switching and Linear Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
VCEX
VCEO
VEBO
IC
ICM
IB
PD
TJ
Tstg
Collector – Base Voltage
VBE = -1.5V
Collector – Emitter Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
tp = 10ms
Peak Collector Current
Base Current
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
250V
250V
200V
7V
20A
25A
4A
110W
0.63W/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
1.59
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8171
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com

BUX11CECC Related Products

BUX11CECC BUX11-JQR-A BUX11-JQR-B BUX11 BUX11R1
Description Power Bipolar Transistor, 20A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN Power Bipolar Transistor, 20A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO3, 2 PIN Power Bipolar Transistor, 20A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO3, 2 PIN Power Bipolar Transistor, 20A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO3, 2 PIN Power Bipolar Transistor, 20A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO3, 2 PIN
Is it Rohs certified? incompatible incompatible incompatible incompatible conform to
package instruction TO-3, 2 PIN HERMETIC SEALED, METAL, TO3, 2 PIN HERMETIC SEALED, METAL, TO3, 2 PIN HERMETIC SEALED, METAL, TO3, 2 PIN HERMETIC SEALED, METAL, TO3, 2 PIN
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 20 A 20 A 20 A 20 A 20 A
Collector-emitter maximum voltage 200 V 200 V 200 V 200 V 200 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 20 10 10 10 10
JEDEC-95 code TO-3 TO-204AA TO-204AA TO-204AA TO-204AA
JESD-30 code O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2
Number of components 1 1 1 1 1
Number of terminals 2 2 2 2 2
Package body material METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 8 MHz 8 MHz 8 MHz 8 MHz 8 MHz
Maker TT Electronics plc - - TT Electronics plc TT Electronics plc
Shell connection - COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum operating temperature - 200 °C 200 °C 200 °C 200 °C
transistor applications - SWITCHING SWITCHING SWITCHING SWITCHING

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