BCP53TA datasheet, PDF - EEWORLD Datasheet

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BCP53TA: DescriptionPower Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin; CategoryDiscrete semiconductor The transistor; File Size39KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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BCP53TA Overview

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

BCP53TA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	1.5 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	125 MHz
VCEsat-Max	0.5 V

BCP53TA Preview

SOT223 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 3 AUGUST 1995

FEATURES

* Suitable for AF drivers and output stages

* High collector current and Low V

CE(sat)

COMPLEMENTARY TYPE

PARTMARKING DETAILS

BCP56

BCP53

BCP53 10

BCP53 16

BCP53

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature

Range

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter Turn-On

Voltage

SYMBOL

(BR)CBO

(BR)CEO

(BR)EBO

CBO

MIN.

-100

-80

-5

-100

-20

-10

-0.5

-1.0

100

250

100

160

125

160

250

MHz

SYMBOL

CBO

CEO

EBO

tot

stg

VALUE

-100

-80

-5

-1.5

-1

-55 to +150

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

TYP.

MAX.

UNIT

CONDITIONS.

=-100

=- 10mA *

=-10

=-30V

=-30V, T

amb

=150°C

=-5V

=-500mA, I

=-50mA*

=-500mA, V

=-2V*

=-150mA,

=-500mA,

=-150mA,

=-2V*

Emitter Cut-Off Current I

EBO

CE(sat)

BE(on)

Static Forward Current h

Transfer Ratio

BCP53-10

BCP53-16

Transition Frequency

=-50mA, V

=-10V,

f=100MHz

*Measured under pulsed conditions. Pulse width=300

s. Duty cycle

≤

3 - 15

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