BCW61DR datasheet, PDF - EEWORLD Datasheet

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BCW61DR: DescriptionSmall Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size57KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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BCW61DR Overview

Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

BCW61DR Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	32 V
Configuration	SINGLE
Minimum DC current gain (hFE)	110
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.15 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	180 MHz
Maximum off time (toff)	800 ns
Maximum opening time (tons)	150 ns

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SOT23 PNP SILICON PLANAR

SMALL SIGNAL TRANSISTORS

ISSUE 2 FEBRUARY 95

PARTMARKING DETAIL

BCW61A

BA

BCW61B

BB

BCW61C

BC

BCW61D

BD

COMPLEMENTARY TYPE

BCW61AR

BCW61BR

BCW61CR

BCW61DR

BCW60

CA

CB

CC

CD

BCW61

E

C

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

B

P

TOT

T

j

:T

stg

VALUE

-32

-5

-200

-50

330

-55 to +150

UNIT

V

mA

mW

°C

FOUR TERMINAL NETWORK DATA (I

c

=2mA, V

CE

=5V, f=1kHz)

h

FE

Group A

Min.

h

11e

h

12e

h

21e

h

22e

1.6

Typ.

2.7

1.5

200

18

30

Max.

4.5

h

FE

Group B

Min.

2.5

Typ.

3.6

2

260

24

50

Max.

6.0

h

FE

GroupC

Min.

3.2

Typ.

4.5

2

330

30

+V

BB

h

FE

Group D

Min.

4.5

Typ.

7.5

3

520

60

V

CC

(-10V)

Max.

8.5

Max.

12

k

Ω

10

-4

100

µ

S

50

R

2

R

L

1

µ

sec

-10V

t

r

< 5nsec

Mark/Space ratio < 0.01

Z

s

=50

Ω

50

Ω

R

1

BAY 63

t

r

< 5nsec

Z

in

≥

100k

Ω

Oscilloscope

PAGE NO

S

W

BCW61DR Related Products

	BCW61DR	BCW61AR	BCW61CR	BCW61BR
Description	Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
Is it Rohs certified?	conform to	conform to	conform to	conform to
Maker	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.2 A	0.2 A	0.2 A	0.2 A
Collector-emitter maximum voltage	32 V	32 V	32 V	32 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	110	60	100	80
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3	e3	e3
Humidity sensitivity level	1	1	1	1
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.15 W	0.15 W	0.225 W	0.15 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	180 MHz	180 MHz	180 MHz	180 MHz
Maximum off time (toff)	800 ns	800 ns	800 ns	800 ns
Maximum opening time (tons)	150 ns	150 ns	150 ns	150 ns

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