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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D087
BSP41; BSP43
NPN medium power transistors
Product data sheet
Supersedes data of 1997 Sep 05
1999 Apr 26
NXP Semiconductors
Product data sheet
NPN medium power transistors
FEATURES
•
High current (max. 1 A)
•
Low voltage (max. 80 V).
APPLICATIONS
•
Telephony and general industrial applications
•
Thick and thin-film circuits.
handbook, halfpage
BSP41; BSP43
PINNING
PIN
1
2,4
3
base
collector
emitter
DESCRIPTION
4
DESCRIPTION
NPN medium power transistor in a SOT223 plastic
package. PNP complements: BSP31; BSP32 and BSP33.
1
2, 4
3
1
Top view
2
3
MAM287
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BSP41
BSP43
V
CEO
collector-emitter voltage
BSP41
BSP43
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
60
80
5
1
2
0.2
1.3
+150
150
+150
V
V
V
A
A
A
W
°C
°C
°C
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
70
90
V
V
MIN.
MAX.
UNIT
1999 Apr 26
2
NXP Semiconductors
Product data sheet
NPN medium power transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
BSP41; BSP43
VALUE
93
12
UNIT
K/W
K/W
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
I
C
= 100
μA;
V
CE
= 5 V; note 1
I
C
= 100 mA; V
CE
= 5 V; note 1
I
C
= 500 mA; V
CE
= 5 V; note 1
V
CEsat
V
BEsat
f
T
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.01.
collector-emitter saturation voltage I
C
= 150 mA; I
B
= 15 mA; note 1
I
C
= 500 mA; I
B
= 50 mA; note 1
base-emitter saturation voltage
transition frequency
IC = 150 mA; IB = 15 mA; note 1
I
C
= 500 mA; I
B
= 50 mA; note 1
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz
−
−
−
30
100
50
−
−
−
−
100
MIN.
MAX.
100
50
100
−
300
−
0.25
0.5
1
1.2
−
V
V
V
V
MHz
UNIT
nA
μA
nA
1999 Apr 26
3
NXP Semiconductors
Product data sheet
NPN medium power transistors
PACKAGE OUTLINE
BSP41; BSP43
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c
y
H
E
b
1
v
M
A
4
Q
A
A
1
1
e
1
e
2
b
p
3
w
M
B
detail X
L
p
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.8
1.5
A
1
0.10
0.01
b
p
0.80
0.60
b
1
3.1
2.9
c
0.32
0.22
D
6.7
6.3
E
3.7
3.3
e
4.6
e
1
2.3
H
E
7.3
6.7
L
p
1.1
0.7
Q
0.95
0.85
v
0.2
w
0.1
y
0.1
OUTLINE
VERSION
SOT223
REFERENCES
IEC
JEDEC
EIAJ
SC-73
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
1999 Apr 26
4
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