LS5114_TO-18 datasheet, PDF - EEWORLD Datasheet

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LS5114_TO-18: DescriptionP-CHANNEL JFET; File Size305KB，2 Pages; ManufacturerMicross; Websitehttps://www.micross.com

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LS5114_TO-18 Overview

P-CHANNEL JFET

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LS5114

P-CHANNEL JFET

Linear Systems replaces discontinued Siliconix 2N5114

This analog switch is designed for inverting switching

into inverting input of an Operational Amplifier.

The hermetically sealed TO-18 package is well suited

for hi-reliability and harsh environment applications.

(See Packaging Information).

FEATURES

DIRECT REPLACEMENT FOR SILICONIX 2N5114

LOW ON RESISTANCE

r

DS(on)

≤ 75Ω

LOW CAPACITANCE

6pF

ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)

Maximum Temperatures

Storage Temperature

‐55°C to +200°C

LS5114 Benefits:

Operating Junction Temperature

‐55°C to +200°C

Low On Resistance

Maximum Power Dissipation

I

D(off)

≤

500 pA

Continuous Power Dissipation

500mW

Switches directly from TTL logic

MAXIMUM CURRENT

LS5114 Applications:

Gate Current (Note 1)

I

G

= ‐50mA

Analog Switches

MAXIMUM VOLTAGES

Commutators

Gate to Drain Voltage

V

GDS

= 30V

Choppers

Gate to Source Voltage

V

GSS

= 30V

LS5114 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

CHARACTERISTIC

MIN

TYP.

MAX

UNITS

CONDITIONS

BV

GSS

Gate to Source Breakdown Voltage

30

‐‐

I

G

= 1µA, V

DS

= 0V

V

GS(off)

Gate to Source Cutoff Voltage

4

‐‐

10

V

DS

= ‐15V, I

D

= ‐1nA

V

GS(F)

Gate to Source Forward Voltage

‐‐

‐0.7

‐1

I

G

= ‐1mA, V

DS

= 0V

‐‐

‐1.0

‐1.3

V

GS

= 0V, I

D

= ‐15mA

V

DS(on)

Drain to Source On Voltage

‐‐

‐0.7

‐‐

V

GS

= 0V, I

D

= ‐7mA

‐‐

‐0.5

‐‐

V

GS

= 0V, I

D

= ‐3mA

I

DSS

Drain to Source Saturation Current (Note 2)

‐30

‐‐

‐90

mA

V

DS

= ‐18V, V

GS

= 0V

I

GSS

Gate Reverse Current

‐‐

5

500

V

GS

= 20V, V

DS

= 0V

I

G

Gate Operating Current

‐‐

‐5

‐‐

V

DS

= ‐15V, I

D

= ‐1mA

pA

‐‐

‐10

‐500

V

DS

= ‐15V, V

GS

= 12V

I

D(off)

Drain Cutoff Current

‐‐

‐10

‐‐

V

DS

= ‐15V, V

GS

= 7V

‐‐

‐10

‐‐

V

DS

= ‐15V, V

GS

= 5V

r

DS(on)

Drain to Source On Resistance

‐‐

75

Ω

I

D

= ‐1mA, V

GS

= 0V

LS5114 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

CHARACTERISTIC

MIN

TYP.

MAX

UNITS

CONDITIONS

g

fs

Forward Transconductance

‐‐

4.5

‐‐

mS

V

DS

= ‐15V, I

D

= 1mA , f = 1kHz

g

os

Output Conductance

‐‐

20

‐‐

µS

r

DS(on)

Drain to Source On Resistance

‐‐

75

Ω

I

D

= 0A, V

GS

= 0V, f = 1kHz

C

iss

Input Capacitance

‐‐

20

25

V

DS

= ‐15V, V

GS

= 0V, f = 1MHz

pF

‐‐

5

7

V

DS

= 0V, V

GS

= 12V, f = 1MHz

C

rss

Reverse Transfer Capacitance

‐‐

6

‐‐

V

DS

= 0V, V

GS

= 7V, f = 1MHz

‐‐

6

‐‐

V

DS

= 0V, V

GS

= 5V, f = 1MHz

e

n

Equivalent Noise Voltage

‐‐

20

‐‐

nV/√Hz

V

DG

= 10V, I

D

= 10mA , f = 1kHz

LS5114 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

CHARACTERISTIC

UNITS

CONDITIONS

Click To Buy

Turn On Time

Turn On Rise Time

Turn Off Time

Turn Off Fall Time

6

10

6

15

ns

V

GS

(L) = ‐11V

V

GS

(H) = 0V

See Switching Circuit

‐10V

20V

430Ω

100Ω

‐15mA

Available Packages:

LS5114 in TO-18

LS5114 in bare die.

Please contact Micross for full

package and die dimensions

Tel: +44 1603 788967

Email:

chipcomponents@micross.com

Web:

http://www.micross.com/distribution

TO-18 (Bottom View)

t

d(on)

t

r

t

d(off)

t

f

Note 1 ‐ Absolute maximum ratings are limiting values above which LS5114 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%

LS5114 SWITCHING CIRCUIT PARAMETERS

V

DD

V

GG

R

L

R

G

I

D(on)

SWITCHING TEST CIRCUIT

Micross Components Europe

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

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