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BCP52-10TC

Description
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
CategoryDiscrete semiconductor    The transistor   
File Size41KB,1 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

BCP52-10TC Overview

Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

BCP52-10TC Parametric

Parameter NameAttribute value
MakerDiodes
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)63
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)125 MHz

BCP52-10TC Related Products

BCP52-10TC
Description Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
Maker Diodes
package instruction SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown
ECCN code EAR99
Shell connection COLLECTOR
Maximum collector current (IC) 1 A
Collector-emitter maximum voltage 60 V
Configuration SINGLE
Minimum DC current gain (hFE) 63
JESD-30 code R-PDSO-G4
Number of components 1
Number of terminals 4
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Polarity/channel type PNP
Certification status Not Qualified
surface mount YES
Terminal form GULL WING
Terminal location DUAL
transistor applications AMPLIFIER
Transistor component materials SILICON
Nominal transition frequency (fT) 125 MHz
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