TL(BE,GTE,EGE)1100B(T11)
TLBE1100B(T11), TLGTE1100B(T11), TLEGE1100B(T11)
Panel Circuit Indicator
Unit: mm
•
•
•
•
•
•
•
Surface-mount devices
3.2 (L) × 2.8 (W) × 1.9 (H) mm
Flat-top type
InGaN LEDs
High luminous intensity
Low drive current, high-intensity light emission
Colors:
Blue
Green
•
•
•
λd=470nm(typ)
λd=528nm(typ)
Bluish Green
λd=505nm(typ)
Pb free reflow soldering is possible
Applications: automotive use, message signboards, backlighting
etc.
Standard embossed tape packing: T11 (2000/reel)
8-mm tape reel
Color and Material
Product Name
TLBE1100B
TLGTE1100B
TLEGE1100B
Color
Blue
Bluish green
Green
InGaN
Material
JEDEC
JEITA
TOSHIBA
Weight: 0.035 g (typ.)
―
―
4-3R1
Maximum Ratings (Ta
=
25°C)
Product Name
TLBE1100B
TLGTE1100B
TLEGE1100B
30
4
Forward Current
I
F
(mA)
Please see Note 1
Reverse Voltage
V
R
(V)
Power Dissipation
P
D
(mW)
129
135
132
−40~100
−40~100
Operation
Temperature
T
opr
(°C)
Storage
Temperature
T
stg
(°C)
Note 1: Forward current derating
TLBE1100B
I
F
– Ta
40
40
TLGTE1100B,TLEGE1100B
I
F
– Ta
(mA)
I
F
Allowable forward current
(mA)
30
30
Allowable forward current
I
F
20
20
10
10
0
0
20
40
60
80
100
0
0
20
40
60
80
100
Ambient temperature
Ta
(°C)
Ambient temperature
Ta
(°C)
For part availability and ordering information please call Toll Free: 800.984.5337
Website: www.marktechopto.com | Email: info@marktechopto.com
1
2006-06-01
TL(BE,GTE,EGE)1100B(T11)
Electrical Characteristics
(Ta
=
25°C)
Product Name
Min
TLBE1100B
TLGTE1100B
TLEGE1100B
Unit
2.8
3.0
2.9
Forward Voltage V
F
Typ.
3.2
3.3
3.4
V
Max
4.3
4.5
4.4
mA
µA
V
20
10
4
I
F
Reverse Current
I
R
Max
V
R
Optical Characteristics–1
(Ta
=
25°C)
Product Name
TLBE1100B
TLGTE1100B
TLEGE1100B
Unit
Luminous Intensity I
V
Min
63
160
100
mcd
Typ.
100
300
350
mcd
Max
320
800
800
mcd
I
F
20
20
20
mA
Available Iv rank
Please see Note 2
QA / RA / SA
SA / TA / UA
RA / SA / TA / UA
Note 2: The specification as following table is used for Iv classification of LEDs in Toshiba facility.
Each reel includes the same rank LEDs. Let the delivery ratio of each rank be unquestioned.
Iv rank
Rank symbol
QA
RA
SA
TA
UA
Unit
Min
63
100
160
250
400
mcd
Max
125
200
320
500
800
mcd
Optical Characteristics–2
(Ta
=
25°C)
Emission Spectrum
Product Name
Peak Emission
Wavelength
λ
p
Min
TLBE1100B
TLGTE1100B
TLEGE1100B
Unit
⎯
⎯
⎯
Typ.
468
496
523
nm
Max
⎯
⎯
⎯
∆λ
Typ.
25
30
35
nm
Dominant Wavelength
λ
d
Min
463
496
518
Typ.
470
505
528
nm
Max
477
514
537
mA
20
I
F
Note 3: Caution
ESD withstand voltage according to MIL STD 883D, Method 3015.7 :
≥1000V
When handling this LED, take the following measures to prevent the LED from being damaged or otherwise
adversely affected.
1) Use a conductive tablemat and conductive floor mat, and ground the workbench and floor.
2) Operators handling laser diodes must be grounded via a high resistance (about 1MΩ). A conductive strap is
good for this purpose.
3) Ground all tools including soldering irons.
2
2006-06-01
TL(BE,GTE,EGE)1100B(T11)
TLBE1100B
I
F
– V
F
100
Ta
=
25°C
50
30
(typ.)
I
V
– I
F
300
Ta
=
25°C
100
50
(typ.)
I
F
10
5
3
Luminous intensity
Forward current
I
V
(mcd)
(mA)
30
10
5
3
1
3
5
10
30
50
100
1
2.4
2.6
3.0
3.4
3.8
4.2
4.6
Forward voltage
V
F
(V)
Forward current
I
F
(mA)
10
5
I
V
– Tc
(typ.)
Relative Iv -
λ
1.0
(typ.)
IF
=
20 mA
Ta
=
25°C
0.8
3
I
V
Relative luminosity
−20
0
20
40
60
80
100
Relative luminosity
0.6
1
0.5
0.3
0.4
0.2
0.1
0
360
400
440
480
520
560
600
Case temperature
Tc
(°C)
Wavelength
λ
(nm)
Radiation pattern
Ta
=
25°C
(typ.)
20°
30°
40°
50°
60°
70°
80°
90°
10°
0°
10°
20°
30°
40°
50°
60°
70°
80°
90
°
1.0
0
0.2
0.4
0.6
0.8
3
2006-06-01
TL(BE,GTE,EGE)1100B(T11)
TLGTE1100B
I
F
– V
F
100
Ta
=
25°C
50
30
(typ.)
I
V
– I
F
1000
Ta
=
25°C
(typ.)
I
V
(mcd)
Luminous intensity
(mA)
500
300
Forward current
I
F
10
5
3
100
50
30
1
2.4
2.6
3.0
3.4
3.8
4.2
4.6
10
1
3
5
10
30
50
100
Forward voltage
V
F
(V)
Forward current
I
F
(mA)
10
5
I
V
– Tc
(typ.)
1.0
Relative Iv -
λ
(typ.)
IF
=
20 mA
Ta
=
25°C
0.8
I
V
3
Relative luminosity
Relative luminosity
−20
100
0.6
1
0.5
0.3
0.4
0.2
0.1
0
20
40
60
80
0
400
440
480
520
560
600
640
Case temperature
Tc
(°C)
Wavelength
λ
(nm)
Radiation pattern
Ta
=
25°C
(typ.)
20°
30°
40°
50°
60°
70°
80°
90°
10°
0°
10°
20°
30°
40°
50°
60°
70°
80°
90
°
1.0
0
0.2
0.4
0.6
0.8
4
2006-06-01
TL(BE,GTE,EGE)1100B(T11)
TLEGE1100B
I
F
– V
F
100
Ta
=
25°C
50
30
(typ.)
1000
500
300
Ta
=
25°C
I
V
– I
F
(typ.)
Forward current
Luminous intensity
I
V
(mcd)
I
F
(mA)
10
5
3
100
50
30
1
2.4
2.6
3.0
3.4
3.8
4.2
4.6
10
1
3
5
10
30
50
100
Forward voltage
V
F
(V)
Forward current
I
F
(mA)
I
V
– Tc
10
5
(typ.)
1.0
Relative Iv -
λ
(typ.)
IF
=
20 mA
Ta
=
25°C
I
V
0.8
Relative luminosity
Relative luminosity
−20
0
20
40
60
80
100
3
0.6
1
0.5
0.3
0.4
0.2
0.1
0
400
440
480
520
560
600
640
Case temperature
Tc
(°C)
Wavelength
λ
(nm)
Radiation pattern
Ta
=
25°C
(typ.)
20°
30°
40°
50°
60°
70°
80°
90°
10°
0°
10°
20°
30°
40°
50°
60°
70°
80°
90
°
1.0
0
0.2
0.4
0.6
0.8
5
2006-06-01
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