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PD200S16

Description
Rectifier Diode, 1 Phase, 2 Element, 200A, 1600V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size121KB,2 Pages
ManufacturerKyocera
Download Datasheet Parametric View All

PD200S16 Overview

Rectifier Diode, 1 Phase, 2 Element, 200A, 1600V V(RRM), Silicon,

PD200S16 Parametric

Parameter NameAttribute value
MakerKyocera
Reach Compliance Codeunknown
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSERIES CONNECTED, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-XUFM-X3
Maximum non-repetitive peak forward current4500 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current200 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1600 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER

PD200S16 Preview

DIODE
■回路図 CIRCUIT
200A Avg 1600 Volts
■外½寸法図 OUTLINE DRAWING
PD200S16
(単½ Dimension:mm)
PD
1
D1
2
D2
3
■最大定格 Maximum Ratings
項   目
Parameter
くり返しピーク逆電圧
*1
Repetitive Peak Reverse Voltage
非くり返しピーク逆電圧
*1
Non Repetitive Peak Reverse Voltage
項   目
Parameter
平均整流電流
*1
Average Rectified Output Current
実効順電流
*1
RMS Forward Current
サージ順電流
*1
Surge Forward Current
電流二乗時間積
*1
I Squared t
動½接合温度範囲
Operating Junction Temperature Range
保存温度範囲
Storage Temperature Range
絶縁耐圧
Isolation Voltage
ベース部
Mounting
締付トルク
Mounting Torque
主端子部
Terminal
記号
Symbol
V
RRM
V
RSM
記号
Symbol
I
0
(AV)
I
(RMS)
F
I
FSM
I
2
t
T
jw
T
stg
V
iso
端子−ベース間,AC1分間
Terminal to Base, AC1min.
サーマルコンパウンド塗布
Greased
50Hz正弦半波,1サイクル,非くり返し
Half Sine Wave, 1Pulse, Non-Repetitive
2∼10ms
条   件
Conditions
商用周波数 180°通電
Half Sine Wave
耐圧クラス Grade
PD200S16
1600
1700
定格値
Max. Rated Value
T
c
=106℃
200
314
4500
101250
−40∼+150
−40∼+125
2500
M6
M6
2.5∼3.5
2.5∼3.5
単½
Unit
V
V
単½
Unit
A
A
A
A
2
s
V
N m
N m
F
■電気的特性 Electrical Characteristics
項   目
Parameter
ピーク逆電流
Peak Reverse Current
ピーク順電圧
Peak Forward Voltage
熱抵抗
Thermal Resistance
接触熱抵抗
Thermal Resistance
質量…約200g
Approximate Weight
*1
*1
*1
*1
記号
Symbol
I
RM
V
FM
R
th
(j-c)
R
th
(c-f)
条   件
Conditions
T
j
=150℃,V
RM
=V
RRM
T
j
= 25℃,I
FM
=600A
接合部−ケース間
Junction to Case
ケース−フィン間,サーマルコンパウンド塗布
Case to Fin, Greased
特性値(最大)
Maximum Value
30
1.5
0.15
0.1
単½
Unit
mA
V
℃/W
℃/W
*1:1アーム½りの値 Value Per 1 Arm.
─ 7 ─
■定格・特性曲線
順 電 圧 特 性
FORWARD CURRENT VS. VOLTAGE
5000
2000
平 均 順 電 力 損 失 特 性
AVERAGE FORWARD POWER DISSIPATION
PD200S16(Per 1 Arm.)
400
350
AVERAGE FORWARD POWER DISSIPATION (W)
PD200S16(Per 1 Arm.)
D.C.
INSTANTANEOUS FORWARD CURRENT (A)
1000
500
200
100
50
20
10
5
2
25゚C
150゚C
(A)
300
250
200
150
100
50
0
HALF SINE WAVE
(W)
0
1
2
3
4
5
0
50
100
150
200
250
300
350
INSTANTANEOUS FORWARD VOLTAGE (V)
AVERAGE FORWARD CURRENT (A)
瞬 時 順 電 圧 (V)
平 均 順 電 流 (A)
平 均 順 電 流 − ケ ー ス 温 度 定 格
AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE
350
D.C.
D.C.
300
PD200S16(Per 1 Arm.)
サ ー ジ 順 電 流 定 格
SURGE CURRENT RATINGS
5000
4500
f=50Hz, Half Sine Wave, Non-Repetitive, Tj=150℃
PD200S16(Per 1 Arm.)
AVERAGE FORWARD CURRENT (A)
4000
250
200
150
100
50
0
HALF SINE WAVE
HALF SINE WAVE
½
(A)
SURGE FORWARD CURRENT (A)
(A)
3500
3000
2500
2000
1500
1000
500
0
0.02s
0.02
0.05
0.1
0.2
0.5
1
2
I
FSM
0
25
50
75
100
125
150
CASE TEMPERATURE (°C)
TIME (s)
ケ ー ス 温 度 (℃)
時 間 (½)
過 渡 熱 抵 抗 特 性
MAXIMUM TRANSIENT THERMAL IMPEDANCE
Junction to Case
0.5
D200S16(Per 1 APrm.)
(℃/W)
TRANSIENT THERMAL IMPEDANCE (℃
/W)
0.2
0.1
0.05
0.02
0.01
0.005
0.001
0.01
0.1
1
10
SQUARE WAVE PULSE DURATION (s)
時 間 (½)
─ 8 ─
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