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Datasheet> All Categories > Discrete semiconductor> The transistor> FF400R12KE3
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FF400R12KE3

Description
580 A, 1200 V, N-CHANNEL IGBT
CategoryDiscrete semiconductor    The transistor   
File Size391KB，8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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FF400R12KE3 Overview

580 A, 1200 V, N-CHANNEL IGBT

FF400R12KE3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X7
Contacts7
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
Shell connectionISOLATED
Maximum collector current (IC)580 A
Collector-emitter maximum voltage1200 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X7
Number of components2
Number of terminals7
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2000 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal off time (toff)760 ns
Nominal on time (ton)345 ns
VCEsat-Max2.15 V
Base Number Matches1

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TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FF400R12KE3
62mmC-SerienModulmitTrench/FeldstopIGBT3undEmitterControlledHighEfficiencyDiode
62mmC-seriesmodulewithtrench/fieldstopIGBT3andEmitterControlledHighEfficiencydiode
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
Gesamt-Verlustleistung
Totalpowerdissipation
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
T
vj
= 25°C
T
C
= 80°C, T
vj max
= 150°C
T
C
= 25°C, T
vj max
= 150°C
t
P
= 1 ms
T
C
= 25°C, T
vj max
= 150

V
CES

1200
400
580
800
2000
+/-20
min.
T
vj
= 25°C
T
vj
= 125°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
t
d on
5,0







typ.
1,70
2,00
5,8
3,70
1,9
28,0
1,10


0,25
0,30
0,04
0,045
0,50
0,60
0,10
0,16
17,0
25,0
42,0
62,0
max.
2,15
6,5




5,0
400

V
V
V
µC
Ω
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ

V

A
A
I
C nom

I
C
I
CRM
P
tot
V
GES




A

W

V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
Gate-Schwellenspannung
Gatethresholdvoltage
Gateladung
Gatecharge
InternerGatewiderstand
Internalgateresistor
Eingangskapazität
Inputcapacitance
Rückwirkungskapazität
Reversetransfercapacitance
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
Anstiegszeit,induktiveLast
Risetime,inductiveload
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
Fallzeit,induktiveLast
Falltime,inductiveload
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
Kurzschlußverhalten
SCdata
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
I
C
= 400 A, V
GE
= 15 V
I
C
= 400 A, V
GE
= 15 V
I
C
= 16,0 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 400 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 1,8
Ω
I
C
= 400 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 1,8
Ω
I
C
= 400 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 1,8
Ω
I
C
= 400 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 1,8
Ω
I
C
= 400 A, V
CE
= 600 V, L
S
= 30 nH
V
GE
= ±15 V, di/dt = 6000 A/µs
R
Gon
= 1,8
Ω
I
C
= 400 A, V
CE
= 600 V, L
S
= 30 nH
V
GE
= ±15 V, du/dt = 4000 V/µs
R
Goff
= 1,8
Ω
V
GE
≤
15 V, V
CC
= 900 V
V
CEmax
= V
CES
-L
sCE
·di/dt
proIGBT/perIGBT
t
r


t
d off


t
f


E
on


E
off
I
SC
R
thJC
R
thCH
T
vj op




-40


t
P
≤
10 µs, T
vj
= 125°C
1600

0,031

A
0,062 K/W
K/W
125
°C
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

preparedby:MK
approvedby:WR
dateofpublication:2013-10-03
revision:3.1
1

FF400R12KE3 Related Products

FF400R12KE3 FF400R12KE3HOSA1
Description 580 A, 1200 V, N-CHANNEL IGBT IGBT MODULE 1200V 400A
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
Parts packaging code MODULE MODULE
package instruction FLANGE MOUNT, R-XUFM-X7 FLANGE MOUNT, R-XUFM-X7
Contacts 7 7
Reach Compliance Code compli compliant
ECCN code EAR99 EAR99
Is Samacsys N N
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 580 A 580 A
Collector-emitter maximum voltage 1200 V 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 code R-XUFM-X7 R-XUFM-X7
Number of components 2 2
Number of terminals 7 7
Maximum operating temperature 150 °C 150 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Nominal off time (toff) 760 ns 760 ns
Nominal on time (ton) 345 ns 345 ns
Base Number Matches 1 1

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