FZ200R65KF2 datasheet, PDF - EEWORLD Datasheet

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FZ200R65KF2: Description1000 A, 6300 V, N-CHANNEL IGBT; CategoryDiscrete semiconductor The transistor; File Size225KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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FZ200R65KF2 Overview

1000 A, 6300 V, N-CHANNEL IGBT

FZ200R65KF2 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Infineon
Parts packaging code	MODULE
package instruction	MODULE-5
Contacts	5
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	1000 A
Collector-emitter maximum voltage	6300 V
Configuration	SINGLE WITH BUILT-IN DIODE
Gate-emitter maximum voltage	20 V
JESD-30 code	R-XUFM-X5
Number of components	1
Number of terminals	5
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	3800 W
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	6500 ns
Nominal on time (ton)	1120 ns
VCEsat-Max	4.9 V

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Technische Information / technical information

IGBT-Module

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