BUX63.MOD datasheet, PDF - EEWORLD Datasheet

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BUX63.MOD: DescriptionPower Bipolar Transistor, 5A I(C), 325V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size11KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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BUX63.MOD Overview

Power Bipolar Transistor, 5A I(C), 325V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN

BUX63.MOD Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	TT Electronics plc
package instruction	HERMETIC SEALED, METAL, TO-66, 2 PIN
Reach Compliance Code	compliant
Shell connection	COLLECTOR
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	325 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-213AA
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	8 MHz

BUX63.MOD Preview

BUX63

Dimensions in mm (inches).

3.68

(0.145) rad.

max.

6.35 (0.250)

8.64 (0.340)

3.61 (0.142)

4.08(0.161)

rad.

Bipolar NPN Device in a

Hermetically sealed TO66

Metal Package.

11.94 (0.470)

12.70 (0.500)

24.13 (0.95)

24.63 (0.97)

1

14.48 (0.570)

14.99 (0.590)

2

0.71 (0.028)

0.86 (0.034)

Bipolar NPN Device.

V

CEO

= 325V

I

C

= 5A

All Semelab hermetically sealed products

can be processed in accordance with the

requirements of BS, CECC and JAN,

JANTX, JANTXV and JANS specifications

4.83 (0.190)

5.33 (0.210)

9.14 (0.360)

min.

1.27 (0.050)

1.91 (0.750)

TO66 (TO213AA)

PINOUTS

1 – Base

2 – Emitter

Case – Collector

Parameter

V

CEO

*

I

C(CONT)

h

FE

f

t

P

D

Test Conditions

Min.

Typ.

Max.

325

5

Units

V

A

-

Hz

@ 4.0/2.0 (V

CE

/ I

C

)

20

8M

60

70

W

* Maximum Working Voltage

This is a shortform datasheet. For a full datasheet please contact

sales@semelab.co.uk.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Generated

1-Aug-02

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BUX63.MOD Related Products

	BUX63.MOD	BUX63.MODR1	BUX63R1	BUX63
Description	Power Bipolar Transistor, 5A I(C), 325V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN	Power Bipolar Transistor, 5A I(C), 325V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN	Power Bipolar Transistor, 5A I(C), 325V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN	Power Bipolar Transistor, 5A I(C), 325V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN
Is it Rohs certified?	incompatible	conform to	conform to	incompatible
Maker	TT Electronics plc	TT Electronics plc	TT Electronics plc	TT Electronics plc
package instruction	HERMETIC SEALED, METAL, TO-66, 2 PIN	HERMETIC SEALED, METAL, TO-66, 2 PIN	HERMETIC SEALED, METAL, TO-66, 2 PIN	HERMETIC SEALED, METAL, TO-66, 2 PIN
Reach Compliance Code	compliant	compliant	compliant	compliant
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	5 A	5 A	5 A	5 A
Collector-emitter maximum voltage	325 V	325 V	325 V	325 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	20	20	20
JEDEC-95 code	TO-213AA	TO-213AA	TO-213AA	TO-213AA
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	8 MHz	8 MHz	8 MHz	8 MHz

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