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B772-O-TP-HF

Description
Power Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size252KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
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B772-O-TP-HF Overview

Power Bipolar Transistor,

B772-O-TP-HF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
Reach Compliance Codenot_compliant
ECCN codeEAR99
Humidity sensitivity level1
Peak Reflow Temperature (Celsius)260
Maximum time at peak reflow temperature10
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
B772-R
B772-O
B772-Y
B772-GR
PNP Silicon
Plastic-Encapsulate
Transistor
DPAK
J
H
C
1
O
2
I
3
M
K
V
Features
Capable of 1.25Watts of Power Dissipation.
Collector-current 3.0A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
and MSL Rating 1
Halogen
free available upon request by adding suffix "-HF"
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=-10mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=-100uAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=-100uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=
-
40Vdc, I
E
=0)
Collector Cutoff Current
(V
CE
=-30Vdc, I
B=
0)
Emitter Cutoff Current
(V
EB
=-6.0Vdc, I
C
=0)
DC Current Gain
(I
C
=-1.0Adc, V
CE
=-2.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=-2.0Adc, I
B
=-0.2Adc)
Base-Emitter Saturation Voltage
(I
C
=-2.0Adc, I
B
=-0.2Adc)
Min
-30
-40
-6.0
---
---
---
Max
---
---
---
-1.0
-10
-1.0
Units
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
4
F
E
G
ON CHARACTERISTICS
h
FE(1)
V
CE(sat)
V
BE(sat)
60
---
---
400
-0.5
-1.5
---
Vdc
Vdc
L
B
D
PIN 1.
BASE
PIN 2.4
COLLECTOR
PIN 3.
EMITTER
Q
A
SMALL-SIGNAL CHARACTERISTICS
f
T
Transistor Frequency
(I
C
=-0.1Adc, V
CE
=-5.0Vdc, f=10MHz)
DIMENSIONS
50
---
MHz
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
O
Q
V
CLASSIFICATION OF H
FE (1)
Rank
Range
R
60-120
O
100-200
Y
160-320
GR
200-400
INCHES
MIN
MAX
0.087
0.094
0.000
0.005
0.026
0.034
0.018
0.023
0.256
0.264
0.201
0.215
0.190
0.236
0.244
0.086
0.094
0.386
0.409
0.114
0.055
0.067
0.063
0.043
0.051
0.000
0.012
0.211
MM
MIN
2.20
0.00
0.66
0.46
6.50
5.10
4.83
6.00
2.18
9.80
6.20
2.39
10.40
MAX
2.40
0.13
0.86
0.58
6.70
5.46
NOTE
2.90
1.40
1.70
1.60
1.10
1.30
0.00
0.30
5.35
www.mccsemi.com
Revision:
B
1 of 2
2013/01/01

B772-O-TP-HF Related Products

B772-O-TP-HF B772-GR-TP B772-GR-TP-HF B772-Y-TP-HF B772-Y-TP B772-O-TP
Description Power Bipolar Transistor, Power Bipolar Transistor, Power Bipolar Transistor, Power Bipolar Transistor, Power Bipolar Transistor, Power Bipolar Transistor,
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Humidity sensitivity level 1 1 1 1 1 1
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260
Maximum time at peak reflow temperature 10 10 10 10 10 10
Maker Micro Commercial Components (MCC) - - Micro Commercial Components (MCC) Micro Commercial Components (MCC) Micro Commercial Components (MCC)

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