SST113_SOT-23 datasheet, PDF - EEWORLD Datasheet

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SST113_SOT-23: DescriptionN-CHANNEL JFET; File Size284KB，2 Pages; ManufacturerMicross; Websitehttps://www.micross.com

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SST113_SOT-23 Overview

N-CHANNEL JFET

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SST113

N-CHANNEL JFET

Linear Systems replaces discontinued Siliconix SST113

This n-channel JFET is optimised for low noise high

performance switching. The part is particularly suitable

for use in low noise audio amplifiers. The SOT-23

package is well suited for cost sensitive applications

and mass production.

(See Packaging Information).

FEATURES

DIRECT REPLACEMENT FOR SILICONIX SST113

LOW GATE LEAKAGE CURRENT

5pA

FAST SWITCHING

t

(on)

≤ 4ns

ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)

Maximum Temperatures

Storage Temperature

‐55°C to +150°C

SST113 Benefits:

Operating Junction Temperature

‐55°C to +135°C

Short Sample & Hold Aperture Time

Maximum Power Dissipation

Low insertion loss

Continuous Power Dissipation

350mW

Low Noise

MAXIMUM CURRENT

SST113 Applications:

Gate Current (Note 1)

50mA

Analog Switches

MAXIMUM VOLTAGES

Commutators

Gate to Drain Voltage

V

GDS

= ‐35V

Choppers

Gate to Source Voltage

V

GSS

= ‐35V

SST113 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

CHARACTERISTIC

MIN

TYP.

MAX

UNITS

CONDITIONS

BV

GSS

Gate to Source Breakdown Voltage

‐35

‐‐

I

G

= 1µA, V

DS

= 0V

V

GS(off)

Gate to Source Cutoff Voltage

‐‐

‐3

V

DS

= 5V, I

D

= 1µA

V

GS(F)

Gate to Source Forward Voltage

‐‐

0.7

‐‐

I

G

= 1mA, V

DS

= 0V

I

DSS

Drain to Source Saturation Current (Note 2)

2

‐‐

mA

V

DS

= 15V, V

GS

= 0V

I

GSS

Gate Reverse Current

‐‐

‐0.005

‐1

nA

V

GS

= ‐15V, V

DS

= 0V

I

G

Gate Operating Current

‐‐

‐0.5

‐‐

pA

V

DG

= 15V, I

D

= 10mA

I

D(off)

Drain Cutoff Current

‐‐

0.005

1

nA

V

DS

= 5V, V

GS

= ‐10V

r

DS(on)

Drain to Source On Resistance

‐‐

100

Ω

I

G

= 1mA, V

DS

= 0V

SST113 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

CHARACTERISTIC

MIN

TYP.

MAX

UNITS

CONDITIONS

g

fs

Forward Transconductance

‐‐

6

‐‐

mS

V

DS

= 20V, I

D

= 1mA , f = 1kHz

g

os

Output Conductance

‐‐

25

‐‐

µS

r

DS(on)

Drain to Source On Resistance

‐‐

100

Ω

V

GS

= 0V, I

D

= 0mA, f = 1kHz

C

iss

Input Capacitance

‐‐

7

12

pF

V

DS

= 0V, V

GS

= ‐10V, f = 1MHz

C

rss

Reverse Transfer Capacitance

‐‐

3

5

e

n

Equivalent Noise Voltage

‐‐

3

‐‐

nV/√Hz

V

DG

= 10V, I

D

= 1mA , f = 1kHz

SST113 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

CHARACTERISTIC

UNITS

CONDITIONS

Click To Buy

Turn On Time

Turn On Rise Time

Turn Off Time

Turn Off Fall Time

2

6

15

ns

V

DD

= 10V

V

GS

(H) = 0V

See Switching Circuit

Available Packages:

SST113 in SOT-23

SST113 in bare die.

Please contact Micross for full

package and die dimensions

SOT-23 (Top View)

t

d(on)

t

r

t

d(off)

t

f

Note 1 ‐ Absolute maximum ratings are limiting values above which SST113 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%

SST113 SWITCHING CIRCUIT PARAMETERS

‐5V

R

L

3200Ω

I

D(on)

3mA

Micross Components Europe

V

GS(L)

SWITCHING TEST CIRCUIT

Tel: +44 1603 788967

Email:

chipcomponents@micross.com

Web:

http://www.micross.com/distribution

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

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