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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ603
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ603 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
ORDERING INFORMATION
PART NUMBER
2SJ603
2SJ603-S
2SJ603-ZJ
2SJ603-Z
PACKAGE
TO-220AB
TO-262
TO-263
TO-220SMD
Note
FEATURES
•
Super low on-state resistance:
R
DS(on)1
= 48 mΩ MAX. (V
GS
=
−10
V, I
D
=
−13
A)
R
DS(on)2
= 75 mΩ MAX. (V
GS
=
−4.0
V, I
D
=
−13
A)
•
Low input capacitance:
C
iss
= 1900 pF TYP. (V
DS
=
−10
V, V
GS
= 0 V)
•
Built-in gate protection diode
Note
TO-220SMD package is produced only in
Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
−60
V
V
A
A
W
W
°C
°C
A
mJ
(TO-262)
m
20
m
25
m
70
50
1.5
150
−55
to +150
−25
62.5
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
=
−30
V, R
G
= 25
Ω,
V
GS
=
−20 →
0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14648EJ3V0DS00 (3rd edition)
Date Published July 2002 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
2000, 2001
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