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ATC700B102FT50XT

Description
CAPACITOR, CERAMIC, MULTILAYER, 50 V, BX, 0.01 uF, SURFACE MOUNT, 1111
CategoryPassive components   
File Size868KB,14 Pages
ManufacturerFREESCALE (NXP)
Download Datasheet Parametric View All

ATC700B102FT50XT Overview

CAPACITOR, CERAMIC, MULTILAYER, 50 V, BX, 0.01 uF, SURFACE MOUNT, 1111

ATC700B102FT50XT Parametric

Parameter NameAttribute value
Maximum operating temperature125 Cel
Minimum operating temperature-55 Cel
negative deviation10 %
positive deviation10 %
Rated DC voltage urdc50 V
Processing package descriptionCHIP, ROHS COMPLIANT
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
terminal coatingTIN OVER NICKEL
Installation featuresSURFACE MOUNT
Manufacturer SeriesATC200B
size code1111
capacitance0.0100 uF
packaging shapeRECTANGULAR PACKAGE
Capacitor typeCERAMIC
Terminal shapeWRAPAROUND
Temperature Coefficient15%
Temperature characteristic codeBX
multi-layerYes
Freescale Semiconductor
Technical Data
Document Number: MRF6V13250H
Rev. 0, 6/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at 1300 MHz.
These devices are suitable for use in pulsed and CW applications.
Typical Performance: V
DD
= 50 Volts, I
DQ
= 100 mA
Signal Type
Pulsed (200
μsec,
10% Duty Cycle)
P
out
(W)
250 Peak
f
(MHz)
1300
G
ps
(dB)
22.7
η
D
(%)
57.0
IRL
(dB)
--18
MRF6V13250HR3
MRF6V13250HSR3
1300 MHz, 250 W, 50 V
LATERAL N-
-CHANNEL
RF POWER MOSFETs
Typical Performance: V
DD
= 50 Volts, I
DQ
= 10 mA, T
C
= 25
°C
Signal Type
CW
P
out
(W)
230 CW
f
(MHz)
1300
G
ps
(dB)
21.0
η
D
(%)
55.0
IRL
(dB)
--17
Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz
at all Phase Angles
250 Watts Pulsed Peak Power, 10% Duty Cycle, 200
μsec
CW Capable
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 V
DD
Operation
Characterized from 20 V to 50 V for Extended Power Range
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel options, see p. 12.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
CASE 465-
-06, STYLE 1
NI-
-780
MRF6V13250HR3
CASE 465A-
-06, STYLE 1
NI-
-780S
MRF6V13250HSR3
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
P
D
Value
--0.5, +120
--6.0, +10
-- 65 to +150
150
225
476
2.38
Unit
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Pulsed: Case Temperature 65°C, 250 W Pulsed, 200
μsec
Pulse Width, 10% Duty
Cycle, 50 Vdc, I
DQ
= 100 mA, 1300 MHz
CW: Case Temperature 77°C, 235 W CW, 50 Vdc, I
DQ
= 10 mA, 1300 MHz
Symbol
Value
(2,3)
Unit
°C/W
Z
θJC
R
θJC
0.07
0.42
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2011. All rights reserved.
MRF6V13250HR3 MRF6V13250HSR3
1
RF Device Data
Freescale Semiconductor
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