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BT152-500RT

Description
High junction temperature capability Very high current surge capability
CategoryAnalog mixed-signal IC    Trigger device   
File Size207KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

BT152-500RT Overview

High junction temperature capability Very high current surge capability

BT152-500RT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
Other featuresHIGH RELIABILITY
Shell connectionANODE
Nominal circuit commutation break time70 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage200 V/us
Maximum DC gate trigger current32 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current60 mA
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum leakage current1 mA
On-state non-repetitive peak current220 A
Number of components1
Number of terminals3
Maximum on-state current13000 A
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum rms on-state current20 A
Off-state repetitive peak voltage500 V
Repeated peak reverse voltage500 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Trigger device typeSCR
TO
-22
0A
B
BT152-500RT
SCR
Rev. 2 — 9 June 2011
Product data sheet
1. Product profile
1.1 General description
Planar passivated Silicon Controlled Rectifier in a SOT78 (TO-220AB) plastic package
intended for use in applications requiring very high inrush current capability, high junction
temperature capability and high thermal cycling performance.
1.2 Features and benefits
High junction temperature capability
High thermal cycling performance
Planar passivated for voltage
ruggedness and reliability
Very high current surge capability
1.3 Applications
Ignition circuits
Motor control
Protection circuits e.g. SMPS inrush
current
Voltage regulation
1.4 Quick reference data
Table 1.
Symbol
V
DRM
V
RRM
I
TSM
Quick reference data
Parameter
repetitive peak off-state
voltage
repetitive peak reverse
voltage
non-repetitive peak
on-state current
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms; see
Figure 4;
see
Figure 5
I
T(AV)
I
T(RMS)
average on-state
current
RMS on-state current
half sine wave; T
mb
122 °C;
see
Figure 3
half sine wave; see
Figure 1;
see
Figure 2
V
D
= 12 V; I
T
= 100 mA;
T
j
= 25 °C; see
Figure 7
Conditions
Min
-
-
-
-
Typ
-
-
-
-
Max Unit
500
500
220
200
V
V
A
A
-
-
-
-
13
20
A
A
Static characteristics
I
GT
gate trigger current
-
3
32
mA

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