Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 4-Element, PNP, Silicon, Plastic/Epoxy, 14 Pin, HERMETIC SEALED, CERAMIC, DIP-14
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Zetex Semiconductors |
| package instruction | IN-LINE, R-PDIP-T14 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 1 A |
| Collector-emitter maximum voltage | 40 V |
| Configuration | SEPARATE, 4 ELEMENTS |
| Minimum DC current gain (hFE) | 20 |
| JESD-30 code | R-PDIP-T14 |
| JESD-609 code | e0 |
| Number of components | 4 |
| Number of terminals | 14 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | 235 |
| Polarity/channel type | PNP |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 10 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 190 MHz |
| VCEsat-Max | 0.5 V |