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FSGL230R4

Description
Power Field-Effect Transistor, 8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3
CategoryDiscrete semiconductor    The transistor   
File Size91KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

FSGL230R4 Overview

Power Field-Effect Transistor, 8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3

FSGL230R4 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeBCY
package instructionCYLINDRICAL, O-MBCY-W3
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)8 A
Maximum drain-source on-resistance0.18 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-205AF
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)235
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)29 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
FSGL230R
Data Sheet
December 2001
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Fairchild Star*Power Rad Hard
MOSFETs have been specifically
TM
developed for high performance
applications in a commercial or
military space environment.
Star*Power MOSFETs offer the system designer both
extremely low r
DS(ON)
and Gate Charge allowing the
development of low loss Power Subsystems. Star*Power
Gold FETs combine this electrical capability with total dose
radiation hardness up to 100K RADs while maintaining the
guaranteed performance for Single Event Effects (SEE)
which the Fairchild FS families have always featured.
The Fairchild family of Star*Power FETs includes a series of
devices in various voltage, current and package styles. The
portfolio consists of Star*Power and Star*Power Gold
products. Star*Power FETs are optimized for total dose and
r
DS(ON)
while exhibiting SEE capability at full rated voltage
up to an LET of 37. Star*Power Gold FETs have been
optimized for SEE and Gate Charge combining SEE
performance to 80% of the rated voltage for an LET of 82
with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
Reliability screening is available as either TXV or Space
equivalent of MIL-PRF-19500.
Formerly available as type TA45230W.
Features
• 8A, 200V, r
DS(ON)
= 0.180Ω
• UIS Rated
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 82MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 5V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
AS
• Photo Current
- 3.0nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
Symbol
D
G
S
Packaging
TO-205AF
Ordering Information
RAD LEVEL
10K
100K
100K
SCREENING LEVEL
Engineering samples
TXV
Space
PART NUMBER/BRAND
FSGL230D1
FSGL230R3
FSGL230R4
D
G
S
©2001 Fairchild Semiconductor Corporation
FSGL230R Rev. B

FSGL230R4 Related Products

FSGL230R4 FSGL230D1 FSGL230R3
Description Power Field-Effect Transistor, 8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3 Power Field-Effect Transistor, 8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3 Power Field-Effect Transistor, 8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3
Is it lead-free? Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code BCY BCY BCY
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Contacts 4 4 4
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 200 V 200 V 200 V
Maximum drain current (ID) 8 A 8 A 8 A
Maximum drain-source on-resistance 0.18 Ω 0.18 Ω 0.18 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-205AF TO-205AF TO-205AF
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material METAL METAL METAL
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 235 235 235
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 29 A 29 A 29 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD
Terminal form WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 30 30 30
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
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