SKiiP 38AC12T4V1
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
MiniSKiiP
®
3
3-phase bridge inverter
SKiiP 38AC12T4V1
Module
Inverse Diode
Features
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Typical Applications*
Remarks
AC
1
29-10-2008 LAN
© by SEMIKRON
SKiiP 38AC12T4V1
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max.
Units
MiniSKiiP
®
3
3-phase bridge inverter
SKiiP 38AC12T4V1
Temperature sensor
Features
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
Typical Applications*
Remarks
AC
2
29-10-2008 LAN
© by SEMIKRON
SKiiP 38AC12T4V1
Fig. 1 Typ. output characteristic
Fig. 2 Rated current vs. temperature I
C
= f (T
S
)
Fig. 3 Typ. turn-on /-off energy = f (I
C
)
Fig. 4 Typ. turn-on /-off energy = f (R
G
)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
29-10-2008 LAN
© by SEMIKRON
SKiiP 38AC12T4V1
Fig. 7 Typ. switching times vs. I
C
Fig. 8 Typ. switching times vs. gate resistor R
G
Fig. 9 Transient thermal impedance of IGBT and Diode
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovered charge
4
29-10-2008 LAN
© by SEMIKRON
SKiiP 38AC12T4V1
UL recognized file
no. E 63 532
5
29-10-2008 LAN
© by SEMIKRON
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