2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH SWITCH
INDUSTRIAL TEMPERATURE RANGE
QUICKSWITCH
®
PRODUCTS
2.5V / 3.3V QUAD ACTIVE LOW,
HIGH BANDWIDTH BUS SWITCH
FEATURES:
DESCRIPTION:
IDTQS3VH125
• N channel FET switches with no parasitic diode to V
CC
– Isolation under power-off conditions
– No DC path to V
CC
or GND
– 5V tolerant in OFF and ON state
• 5V tolerant I/Os
• Low R
ON
- 4Ω typical
Ω
• Flat R
ON
characteristics over operating range
• Rail-to-rail switching 0 - 5V
• Bidirectional dataflow with near-zero delay: no added ground
bounce
• Excellent R
ON
matching between channels
• V
CC
operation: 2.3V to 3.6V
• High bandwidth - up to 500MHz
• LVTTL-compatible control Inputs
• Undershoot Clamp Diodes on all switch and control Inputs
• Low I/O capacitance, 4pF typical
• Available in QSOP and SOIC packages
The QS3VH125 is a high bandwidth, Quad bus switch. The QS3VH125
has very low ON resistance, resulting in under 250ps propagation delay
through the switch. The switches can be turned ON under the control
of individual LVTTL-compatible active low Output Enable signals for
bidirectional data flow with no added delay or ground bounce. In the ON
state, the switches can pass signals up to 5V. In the OFF state, the
switches offer very high impedence at the terminals.
The combination of near-zero propagation delay, high OFF imped-
ance, and over-voltage tolerance makes the QS3VH125 ideal for high
performance communications applications.
The QS3VH125 is characterized for operation from -40°C to +85°C.
APPLICATIONS:
•
•
•
•
•
Hot-swapping
10/100 Base-T, Ethernet LAN switch
Low distortion analog switch
Replaces mechanical relay
ATM 25/155 switching
FUNCTIONAL BLOCK DIAGRAM
1
A
2
A
3
A
4
A
1OE
2OE
3OE
4OE
1
Y
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
2
Y
3
Y
4
Y
INDUSTRIAL TEMPERATURE RANGE
1
c
2013 Integrated Device Technology, Inc.
JANUARY 2013
DSC-5597/11
IDTQS3VH125
2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH SWITCH
INDUSTRIAL TEMPERATURE RANGE
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Description
Max
V
TERM
(2)
SupplyVoltage to Ground
V
TERM
(3)
DC Switch Voltage V
S
–0.5 to +4.6
–0.5 to +5.5
–0.5 to +5.5
–3
120
–65 to +150
Unit
V
V
V
V
mA
°C
NC
1OE
1
A
1
Y
2OE
2
A
2
Y
GND
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
CC
4OE
4
A
4
Y
3OE
3
A
3
Y
NC
V
TERM
(3)
DC Input Voltage V
IN
V
AC
I
OUT
T
STG
AC Input Voltage (pulse width
≤20ns)
DC Output Current (max. sink current/pin)
Storage Temperature
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. V
CC
terminals.
3. All terminals except V
CC
.
QSOP
TOP VIEW
0V)
Symbol
C
IN
C
I/O
C
I/O
CAPACITANCE
Parameter
(1)
Control Inputs
(T
A
= +25°C, F = 1MHz, V
IN
= 0V, V
OUT
=
Typ.
3
4
8
Max.
5
6
12
Unit
pF
pF
pF
Quickswitch Channels (Switch OFF)
Quickswitch Channels (Switch ON)
NOTE:
1. This parameter is guaranteed but not production tested.
1OE
1
A
1
Y
2OE
2
A
2
Y
GND
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
CC
4OE
4
A
4
Y
3OE
3
A
3
Y
PIN DESCRIPTION
Pin Names
1
A
- 4
A
1
Y
- 4
Y
1OE
-
4OE
I/O
I/O
I/O
I
Bus A
Bus Y
Output Enable
Description
FUNCTION TABLE
(1)
SOIC
TOP VIEW
OE
L
L
H
A
H
L
X
Y
H
L
X
Function
Connect
Connect
Disconnect
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don't Care
2
IDTQS3VH125
2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH SWITCH
INDUSTRIAL TEMPERATURE RANGE
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Industrial: T
A
= –40°C to +85°C, V
CC
= 3.3V ±0.3V
Symbol
V
IH
V
IL
I
IN
I
OZ
I
OFF
R
ON
Parameter
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current (Control Inputs)
Off-State Current (Hi-Z)
Data Input/Output Power Off Leakage
Switch ON Resistance
for Control Inputs
Guaranteed Logic LOW
for Control Inputs
0V
≤
V
IN
≤
V
CC
0V
≤
V
OUT
≤
5V, Switches OFF
V
IN
or V
OUT
0V to 5V, V
CC
= 0V
V
CC
= 2.3V
Typical at V
CC
= 2.5V
V
CC
= 3V
NOTE:
1. Typical values are at V
CC
= 3.3V and T
A
= 25°C.
Test Conditions
Guaranteed Logic HIGH
V
CC
= 2.3V to 2.7V
V
CC
= 2.7V to 3.6V
V
CC
= 2.3V to 2.7V
V
CC
= 2.7V to 3.6V
Min.
1.7
2
—
—
—
—
—
Typ.
(1)
Max.
—
—
—
—
—
—
—
6
7
4
5
—
—
0.7
0.8
±1
±1
±1
8
9
6
8
Unit
V
V
μA
μA
μA
Ω
V
IN
= 0V
V
IN
= 1.7V
V
IN
= 0V
V
IN
= 2.4V
I
ON
= 30mA
I
ON
= 15mA
I
ON
= 30mA
I
ON
= 15mA
—
—
—
—
TYPICAL ON RESISTANCE vs V
IN
AT V
CC
= 3.3V
16
14
R
ON
(ohms)
12
10
8
6
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
IN
(Volts)
3
IDTQS3VH125
2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH SWITCH
INDUSTRIAL TEMPERATURE RANGE
POWER SUPPLY CHARACTERISTICS
Symbol
I
CCQ
ΔI
CC
I
CCD
Parameter
Quiescent Power Supply Current
Power Supply Current
(2,3)
per Input HIGH
Dynamic Power Supply Current
(4)
Test Conditions
(1)
V
CC
= Max., V
IN
= GND or V
CC
, f = 0
V
CC
= Max., V
IN
= 3V, f = 0 per Control Input
V
CC
= 3.3V, A and Y Pins Open, Control Inputs
Toggling @ 50% Duty Cycle
Min.
—
—
Typ.
2
—
Max.
4
30
Unit
mA
μA
See Typical I
CCD
vs Enable Frequency graph below
NOTES:
1. For conditions shown as Min. or Max., use the appropriate values specified under DC Electrical Characteristics.
2. Per input driven at the specified level. A and Y pins do not contribute to
ΔIcc.
3. This parameter is guaranteed but not tested.
4. This parameter represents the current required to switch internal capacitance at the specified frequency. The A and Y inputs do not contribute to the Dynamic Power Supply Current. This
parameter is guaranteed but not production tested.
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