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SKM100GB176D_10

Description
125 A, 1700 V, N-CHANNEL IGBT
Categorysemiconductor    Discrete semiconductor   
File Size959KB,7 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Download Datasheet Parametric Compare View All

SKM100GB176D_10 Overview

125 A, 1700 V, N-CHANNEL IGBT

SKM100GB176D_10 Parametric

Parameter NameAttribute value
Number of terminals7
Rated off time820 ns
Maximum collector current125 A
Maximum Collector-Emitter Voltage1700 V
Processing package descriptionCASE D 61, SEMITRANS 2, 7 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formUNSPECIFIED
terminal coatingtin/silver
Terminal locationUPPER
Packaging MaterialsUNSPECIFIED
structureSERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODES
Shell connectionisolation
Number of components2
transistor applicationsPOWER control
Transistor component materialssilicon
Channel typeN channel
Transistor typeINSULATED GATE BIPOLAR
Rated on time320 ns
SKM 100GB176D
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SEMITRANS
®
2
Trench IGBT Modules
SKM 100GB176D
Inverse Diode
Module
Features
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Typical Applications*
GB
1
28-06-2010 GIL
© by SEMIKRON

SKM100GB176D_10 Related Products

SKM100GB176D_10 SKM100GB176D
Description 125 A, 1700 V, N-CHANNEL IGBT 125 A, 1700 V, N-CHANNEL IGBT
Number of terminals 7 7
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Shell connection isolation ISOLATED
Number of components 2 2
transistor applications POWER control POWER CONTROL
Transistor component materials silicon SILICON
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