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Datasheet> All Categories > Discrete semiconductor> The transistor> NE5510379A-T1
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NE5510379A-T1

Description
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size58KB，8 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

NE5510379A-T1 Overview

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

NE5510379A-T1 Parametric

Parameter NameAttribute value
MakerNEC Electronics
package instructionMICROWAVE, R-PQMW-F4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)1.5 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PQMW-F4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formMICROWAVE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationQUAD
transistor applicationsAMPLIFIER
Transistor component materialsSILICON

NE5510379A-T1 Preview

PRELIMINARY DATA SHEET
SILICON POWER MOS FET
NE5510379A
4.8 V OPERATION SILICON RF POWER LD-MOS FET
FOR 900 MHz 3 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5510379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
for 4.8 V GSM 900 handsets. Dies are manufactured using NEC’s NEWMOS technology (NEC’s 0.6
µ
m WSi gate
lateral-diffusion MOS FET) and housed in a surface mount package. The device can deliver 35.0 dBm output power
with 55% power added efficiency at 900 MHz under the 4.8 V supply voltage, or can deliver 33.5 dBm output power
at 2.8 V by varying the gate voltage as a power control function.
FEATURES
• High output power
• High linear gain
• Surface mount package
• Single supply
: P
out
= 35.0 dBm TYP. (V
DS
= 4.8 V, I
Dset
= 600 mA, f = 900 MHz, P
in
= 25 dBm)
: G
L
= 13.0 dB TYP. (V
DS
= 4.8 V, I
Dset
= 600 mA, f = 900 MHz, P
in
= 10 dBm)
: 5.7
×
5.7
×
1.1 mm MAX.
: V
DS
= 2.4 to 6.0 V
• High power added efficiency :
η
add
= 55% TYP. (V
DS
= 4.8 V, I
Dset
= 600 mA, f = 900 MHz, P
in
= 25 dBm)
APPLICATIONS
• Digital cellular phones
• Analog cellular phones
• Others
: 4.8 V GSM 900 handsets
: 2.4 V AMPS handsets
: 3.5 V two-way pagers
ORDERING INFORMATION
Part Number
NE5510379A-T1
Package
79A
Marking
W3
Supplying Form
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 1 kpcs/reel
Remark
To order evaluation samples, consult your NEC sales representative.
Part number for sample order: NE5510379A
Caution Please handle this device at static-free workstation, because this is an electrostatic
sensitive device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15194EJ1V0DS00 (1st edition)
Date Published February 2001 NS CP(K)
Printed in Japan
©
1999, 2001
NE5510379A
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current (Pulse Test)
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GSO
I
D
I
D
Note
Ratings
8.5
5.0
1.5
3.0
1.6
125
−65
to +125
Unit
V
V
A
A
W
°C
°C
P
tot
T
ch
T
stg
Note
Duty Cycle
≤
50%, T
on
≤
1 ms
RECOMMENDED OPERATING CONDITIONS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (Pulse Test)
Input Power
Symbol
V
DS
V
GSO
I
D
P
in
Duty Cycle
≤
50%, T
on
≤
1 ms
f = 900 MHz, V
DS
= 4.8 V
Test Conditions
MIN.
2.4
0
−
25
TYP.
4.8
2.5
1.45
26
MAX.
6.0
3.5
2.0
27
Unit
V
V
A
dBm
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
Parameter
Gate to Source Leak Current
Saturated Drain Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Transconductance
Drain to Source Breakdown Voltage
Thermal Resistance
Linear Gain
Symbol
I
GSO
I
DSS
V
th
g
m
BV
DS
R
th
G
L
Test Conditions
V
GSS
= 5.0 V
V
DSS
= 8.5 V
V
DS
= 3.5 V, I
DS
= 1 mA
V
DS
= 3.5 V, I
DS
1 = 600 mA
I
DSS
= 10
µ
A
Channel to Case
f = 900 MHz, P
in
= 10 dBm,
V
DS
= 4.8 V, I
Dset
= 600 mA,
Note 1, 2
f = 900 MHz, P
in
= 25 dBm,
V
DS
= 4.8 V, I
Dset
= 600 mA,
Note 1, 2
MIN.
−
−
1.0
−
20
−
12.0
TYP.
−
−
1.5
3
24
5
13.0
MAX.
100
100
2.0
−
−
−
−
−
−
−
Unit
nA
nA
V
S
V
°C/W
dB
Output Power
Operating Current
Power Added Efficiency
P
out
I
op
34.0
−
50
35.0
1 450
55
dBm
mA
%
η
add
Notes 1.
Peak measurement at Duty Cycle
≤
50%, T
on
≤
1 ms.
2.
DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
2
Preliminary Data Sheet P15194EJ1V0DS
NE5510379A
TYPICAL CHARACTERISTICS (T
A
= +25°C)
°
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
20.0
V
GS
= 10 V MAX.
18.0 Step = 1.0 V
16.0
Drain Current I
D
(A)
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0
2
4
6
8
10
12
14
16
Drain to Source Voltage V
DS
(V)
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
37
Drain Efficiency
η
d
(%)
Power Added Efficiency
η
add
(%)
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. INPUT POWER
2 500
100
V
DS
= 3.5 V
I
Dset
= 600 mA
f = 900 MHz
Output Power P
out
(dBm)
27
1 500
Drain Current I
D
(mA)
32
V
DS
= 3.5 V
I
Dset
= 600 mA
f = 900 MHz
P
out
2 000
η
d
50
η
add
22
I
D
17
1 000
500
0
35
12
5
10
15
20
25
30
0
5
10
15
20
25
30
35
Input Power P
in
(dBm)
Input Power P
in
(dBm)
OUTPUT POWER, DRAIN CURRENT
vs. GATE TO SOURCE VOLTAGE
36
V
DS
= 3.5 V
f = 900 MHz
P
in
= 25 dBm
2 500
P
out
Drain Current I
D
(mA)
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
100
Drain Efficiency
η
d
(%)
Power Added Efficiency
η
add
(%)
Output Power P
out
(dBm)
35
2 000
V
DS
= 3.5 V
f = 900 MHz
P
in
= 25 dBm
η
d
η
add
50
34
I
D
33
1 500
1 000
32
500
0
4.0
31
0.0
1.0
2.0
3.0
0
1.0
2.0
3.0
4.0
Gate to Source Voltage V
GS
(V)
Gate to Source Voltage V
GS
(V)
Preliminary Data Sheet P15194EJ1V0DS
3
NE5510379A
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
35
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. INPUT POWER
2 500
100
Output Power P
out
(dBm)
25
1 500
Drain Current I
D
(mA)
30
2 000
Drain Efficiency
η
d
(%)
Power Added Efficiency
η
add
(%)
V
DS
= 2.8 V
I
Dset
= 600 mA
f = 900 MHz
P
out
V
DS
= 2.8 V
I
Dset
= 600 mA
f = 900 MHz
η
d
50
η
add
20
I
D
15
1 000
500
0
35
10
5
10
15
20
25
30
0
5
10
15
20
25
30
35
Input Power P
in
(dBm)
Input Power P
in
(dBm)
OUTPUT POWER, DRAIN CURRENT
vs. GATE TO SOURCE VOLTAGE
34
V
DS
= 2.8 V
f = 900 MHz
P
in
= 25 dBm
2 500
P
out
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
100
Output Power P
out
(dBm)
32
1 500
Drain Current I
D
(mA)
33
2 000
Drain Efficiency
η
d
(%)
Power Added Efficiency
η
add
(%)
V
DS
= 2.8 V
f = 900 MHz
P
in
= 25 dBm
η
d
η
add
50
31
I
D
30
1 000
500
0
4.0
29
0.0
1.0
2.0
3.0
0
1.0
2.0
3.0
4.0
Gate to Source Voltage V
GS
(V)
Gate to Source Voltage V
GS
(V)
Remark
The graphs indicate nominal characteristics.
4
Preliminary Data Sheet P15194EJ1V0DS
NE5510379A
S-PARAMETERS
Test Conditions: V
DS
= 3.5 V, I
Dset
= 600 mA
Frequency
S
11
MAG.
0.924
0.913
0.914
0.907
0.910
0.915
0.914
0.928
0.931
0.937
0.949
0.940
0.935
0.935
0.933
0.933
0.930
0.936
0.928
0.932
0.932
0.934
0.930
0.930
0.930
0.935
0.934
0.929
0.933
0.936
ANG.
−164.4
−173.7
−176.8
−178.4
−179.7
179.0
178.2
177.2
176.3
174.8
172.9
171.3
170.1
169.0
167.8
166.3
164.8
163.7
161.6
159.8
157.7
156.2
154.3
152.6
149.8
148.2
146.2
144.2
142.7
140.5
dB
15.6
9.6
6.0
3.3
1.4
−0.4
−1.8
−3.2
−4.3
−5.4
−6.2
−7.3
−8.2
−9.1
−9.9
−10.5
−11.7
−12.0
−12.8
−13.2
−14.0
−14.9
−15.9
−15.4
−16.5
−16.5
−18.4
−17.7
−18.4
−18.4
GHz
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
S
21
MAG.
6.01
3.02
1.99
1.46
1.17
0.95
0.81
0.69
0.61
0.54
0.49
0.43
0.39
0.35
0.32
0.30
0.26
0.25
0.23
0.22
0.20
0.18
0.16
0.17
0.15
0.15
0.12
0.13
0.12
0.12
ANG.
93.7
84.8
81.0
75.9
72.0
68.8
65.2
62.3
58.5
55.9
51.3
49.2
44.9
43.8
40.4
38.7
36.3
33.6
30.1
30.3
27.0
26.0
23.4
23.3
22.1
22.5
20.2
15.1
15.3
15.0
dB
−37.1
−37.1
−36.5
−37.7
−37.1
−37.7
−38.4
−38.4
−40.0
−40.0
−40.9
−40.9
−40.9
−41.9
−41.9
−43.1
−43.1
−41.9
−43.1
−41.9
−43.1
−44.4
−41.9
−40.9
−44.4
−40.9
−40.9
−40.0
−39.2
−38.4
S
12
MAG.
0.014
0.014
0.015
0.013
0.014
0.013
0.012
0.012
0.010
0.010
0.009
0.009
0.009
0.008
0.008
0.007
0.007
0.008
0.007
0.008
0.007
0.006
0.008
0.009
0.006
0.009
0.009
0.010
0.011
0.012
S
22
ANG.
8.7
−1.3
0.9
−2.7
−7.4
−7.6
−5.5
−8.0
−7.7
−2.5
−4.1
−5.4
−1.2
8.0
−5.3
1.8
19.6
20.2
18.8
33.8
55.2
38.1
49.9
50.5
44.3
49.7
65.5
51.9
70.2
65.1
MAG.
0.895
0.895
0.911
0.899
0.920
0.912
0.918
0.924
0.935
0.944
0.952
0.940
0.936
0.936
0.941
0.935
0.932
0.946
0.942
0.948
0.932
0.944
0.936
0.951
0.940
0.941
0.940
0.958
0.942
0.960
ANG.
−177.5
−179.7
179.8
179.1
178.2
177.9
177.6
176.7
176.2
174.7
173.9
172.1
171.2
170.0
169.5
167.9
167.6
165.5
164.7
163.0
162.2
159.8
158.1
156.4
154.9
152.9
151.0
148.9
147.7
145.7
MAG
dB
Note
MSG
dB
Note
K
26.3
23.3
21.2
20.5
19.2
18.6
18.3
17.6
17.9
17.3
17.4
16.8
12.8
10.9
10.3
8.7
6.7
8.4
6.2
6.9
4.3
4.4
2.5
4.6
2.0
2.8
0.5
2.9
0.7
3.2
0.09
0.28
0.50
0.37
0.51
0.35
0.15
0.87
1.35
1.91
2.02
3.01
4.01
2.37
3.98
2.90
5.30
5.55
5.67
3.34
7.86
4.46
6.00
3.44
4.65
2.48
Note
When K
≥
1, the MAG (Maximum Available Gain) is used.
When K
<
1, the MSG (Maximum Stable Gain) is used.
MAG =
S
21
S
12
(K –
√
(K
2
– 1) )
1+
∆
2
−S
11
2
−S
22
2
,K=
,
2
⋅S
12
⋅S
21
S
21
MSG =
S
12
∆
= S
11
⋅
S
22
−
S
21
⋅
S
12
LARGE SIGNAL IMPEDANCE (V
DS
= 3.5 V, I
Dset
= 600 mA, P
in
= 25 dBm)
f (MHz)
900
Z
in
(Ω)
TBD
Z
OL
(Ω)
TBD
Note
Note
Z
OL
is the conjugate of optimum load impedance at given voltage, idling current, input power and frequency.
Preliminary Data Sheet P15194EJ1V0DS
5
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