HL7859MG
Visible High Power Laser Diode
ADE-208-229D (Z)
5th Edition
Dec. 2000
Description
The HL7859MG is a 0.78
µm
band GaAlAs laser diode with a multi-quantum well (MQW) structure. It is
suitable as a light source for optical disc memories and various other types of optical equipment. Hermetic
sealing of the small package (φ 5.6 mm) assures high reliability.
Application
•
Optical disc memories
Features
•
High output power
•
Visible light output
•
Small package
•
Low astigmatism
: 35 mW (CW)
:
λp
= 775 to 795 nm
:
φ
5.6 mm dia.
: 5
µm
Typ (P
O
= 5 mW)
Package Type
•
HL7859MG: MG
Internal Circuit
1
3
PD
LD
2
HL7859MG
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
Pulse optical output power
Laser diode reverse voltage
Photo diode reverse voltage
Operating temperature
Storage temperature
Symbol
P
O
P
O(pulse)
V
R(LD)
V
R(PD)
Topr
Tstg
Value
35
42
*
2
30
–10 to +60
–40 to +85
Unit
mW
mW
V
V
°C
°C
Note: Pulse condition : Pulse width = 1
µs,
duty = 50%
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Optical output power
Threshold current
Operating voltage
Slope efficiency
Beam divergence
parallel to the junction
Beam divergence
parpendicular to the junction
Asitgmatism
Lasing wavelength
Monitor current
Symbol
P
O
Ith
V
OP
ηs
θ//
θ⊥
A
S
λp
I
S
Min
35
—
—
0.35
8
18
—
775
0.2
Typ
—
35
2.1
0.65
9.5
23
5
785
—
Max
—
60
2.5
0.80
12
28
—
795
2
Unit
mW
mA
V
mW/mA
deg.
deg.
µm
nm
mA
Test Conditions
Kink free
*
—
P
O
= 35 mW
21 (mW) / (I
(28mW)
– I
(7mW)
)
P
O
= 35 mW
P
O
= 35 mW
P
O
= 5 mW, NA = 0.4
P
O
= 35 mW
P
O
= 35 mW, V
R(PD)
= 5 V
Note: Kink free is confirmed at the temperature of 25°C.
Rev.5, Dec. 2000, page 2 of 8
HL7859MG
Typical Characteristic Curves
Optical Output Power vs. Forward Current
50
Optical output power, P
O
(mW)
40
T
C
= 0°C
30
20
10
0
T
C
= 60°C
Monitor current, I
S
(mA)
T
C
= 25°C
Monitor Current vs.Optical Output Power
1.0
V
R(PD)
= 5 V
T
C
= 25°C
0.8
0.6
0.4
0.2
0
0
40
80
120
160
200
0
10
20
30
40
50
Foward current, I
F
(mA)
Optical output power, P
O
(mW)
Slope Efficiency vs. Case Temperature
1.0
Slope efficiency,
ηs
(mW/mA)
Threshold Current vs. Case Temperature
100
Threshold current , Ith (mA)
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
60
Case temperature, T
C
(°C)
10
0
10
20
30
40
50
60
Case temperature, T
C
(°C)
Rev.5, Dec. 2000, page 3 of 8
HL7859MG
Typical Characteristic Curves
(cont)
Monitor Current vs. Case Temperature
2.0
Lasing wavelength,
λp
(nm)
Monitor current, I
S
(mA)
Lasing Wavelength vs. Case Temperature
800
P
O
= 35 mW
795
P
O
= 35 mW
V
R(PD)
= 5 V
1.5
790
1.0
785
0.5
780
0
0
775
10
20
30
40
50
60
0
10
20
30
40
50
60
Case temperature, T
C
(°C)
Case temperature, T
C
(°C)
Lasing Spectrum
T
C
= 25°C
P
O
= 35 mW
Relative intensity
Polarization ratio
Polarization Ratio vs. Optical Output Power
1000
800
T
C
= 25°C
NA = 0.4
600
P
O
= 20 mW
400
200
P
O
= 10 mW
780
782
784
786
788
790
0
0
10
20
30
40
50
Optical output power, P
O
(mW)
Lasing wavelength,
λp
(nm)
Rev.5, Dec. 2000, page 4 of 8
HL7859MG
Typical Characteristic Curves
(cont)
Astigmatism vs. Optical Output Power
20
Far Feild Pattem
Astigmatism, A
S
(µm)
1.0
P
O
= 35 mW
0.8 T
C
= 25°C
Intensity
T
C
= 25°C
NA = 0.55
15
Perpendicular
0.6
0.4
0.2
0
−40 −30 −20 −10
0 10 20
Angle,
θ
(deg.)
30
40
Parallel
10
5
0
0
10
20
30
40
50
Optical output power, P
O
(mW)
Electrostatic Destruction(MIL standard)
100
80
Survival rate (%)
Electrostatic Distruction (MIL standard)
100
Survival rate (%)
Forward
N = 10 pcs
∆I
O
≤
10%
judgment
80
60
40
20
0
Reverse
N = 10 pcs
∆I
O
≤
10%
judgment
60
40
20
0
0
500
1000
1500
Applied voltage (V)
2000
0
1000
2000
3000
4000
Applied voltage (V)
Rev.5, Dec. 2000, page 5 of 8
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