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SKM600GA12E4_0906

Description
IGBT4 Modules
File Size121KB,6 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
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SKM600GA12E4_0906 Overview

IGBT4 Modules

SKM600GA12E4
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 3xI
Cnom
V
CC
= 800 V
V
GE
15 V
V
CES
1200 V
V
GES
t
psc
T
j
Inverse diode
I
F
SKM600GA12E4
Conditions
Values
1200
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
916
704
600
1800
-20 ... 20
SEMITRANS 4
IGBT4 Modules
®
T
j
= 150 °C
10
-40 ... 175
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
707
529
600
1800
3240
-40 ... 175
500
-40 ... 125
I
Fnom
Features
• IGBT4 = 4. Generation (Trench)IGBT
• VCEsat with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x I
CNOM
• Soft switching 4. Generation CAL
diode (CAL4)
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
AC sinus 50Hz, t = 1 min
4000
Typical Applications
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
I
C
= 600 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
GE
= 15 V
T
j
= 25 °C
T
j
= 150 °C
5
T
j
= 25 °C
T
j
= 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
37.2
2.32
2.04
3400
1.3
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
195
90
74
690
130
84
0.049
1.8
2.2
0.8
0.7
1.7
2.5
5.8
0.1
2.05
2.4
0.9
0.8
1.9
2.7
6.5
0.3
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
ns
ns
mJ
ns
ns
mJ
K/W
Conditions
min.
typ.
max.
Unit
Remarks
• Case temperature limited to
T
c
= 125°C max, recomm.
T
op
= -40 ... +150°C, product
rel. results valid for T
j
= 150°
• Short circuit: Soft Turn-off
recommended RGoff > 20
• With RG = 2
the RBSOA is limited to
1 x ICnom = 600 A
V
GE
=V
CE
, I
C
= 24 mA
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
V
CC
= 600 V
I
C
= 600 A
V
GE
= ±15 V
R
G on
= 2
R
G off
= 2
di/dt
on
= 6000 A/µs
di/dt
off
= 5200 A/µs
per IGBT
GA
© by SEMIKRON
Rev. 2 – 16.06.2009
1

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