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IRGC26B120KB

Description
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2
CategoryDiscrete semiconductor    The transistor   
File Size44KB,1 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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IRGC26B120KB Overview

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2

IRGC26B120KB Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
package instructionDIE-2
Reach Compliance Codeunknown
ECCN codeEAR99
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE
Gate emitter threshold voltage maximum6 V
JESD-30 codeS-XUUC-N2
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON

IRGC26B120KB Preview

IRGC26B120KB
Features
•
•
•
•
•
PD - 94563
Die in Wafer Form
1200V
I
C(nom)
=25A
V
CE(on) typ.
=2.35V @
I
C(nom)
@ 25°C
Motor Control IGBT
Short Circuit Rated
150mm Wafer
Benefits
GEN5 Non Punch Through (NPT) Technology
Low V
CE(on)
10
µ
s Short Circuit Capability
Square RBSOA
Positive V
CE(on)
Temperature Coefficient
C
G
E
• Benchmark Efficiency for Motor Control Applications
• Rugged Transient Performance
• Excellent Current Sharing in Parallel Operation
Reference Standard IR Package Part: GB25XF120K
Electrical Characteristics (Wafer Form)
Parameter
Description
V
CE (on)
Collector-to-Emitter Saturation Voltage
V
(BR)CES
Colletor-to-Emitter Breakdown Voltage
V
GE(th)
I
CES
I
GES
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Guaranteed (min, max)
Test Conditions
1.54V min, 1.96V max I
C
= 10A, T
J
= 25°C, V
GE
= 15V
T
J
= 25°C, I
CES
= 250µA, V
GE
= 0V
1200V min
4.4V min, 6.0V max
10µA max
± 1.1µA max
V
GE
= V
CE
, T
J
=25°C, I
C
= 250µA
T
J
= 25°C, V
CE
= 1200V
T
J
= 25°C, V
GE
= +/-20V
Mechanical Data
Nominal Backmetal Composition, (Thickness)
Nominal Front Metal Composition, (Thickness)
Dimensions
Wafer Diameter
Wafer Thickness, Tolerance
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Recommended Die Attach Conditions
Al - Ti - Ni/V - Ag, (1kA - 1kA - 4kA - 6kA)
99% Al/1% Si, (4µm)
0.260" x 0.260"
150mm, with std. < 100 > flat
185µm, +/-15µm
01-5567
100µm
0.25mm diameter minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300°C
Die Outline
6.604
[.260]
5.205
[.205]
NOT ES :
1. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
2. CONT ROLLING DIMENS ION: [INCH].
3. LET T ER DES IGNAT ION:
S = S OURCE
G = GAT E
S K = S OURCE KELVIN
IS = CURRENT S ENS E
< 0.635 T OLERANCE = + /- 0.013
< [.0250] T OLERANCE = + /- [.0005]
> 0.635 T OLERANCE = + /- 0.025
> [.0250] T OLERANCE = + /- [.0010]
< 1.270 T OLERANCE = + /- 0.102
< [.050] T OLERANCE = + /- [.004]
> 1.270 T OLERANCE = + /- 0.203
> [.050] T OLERANCE = + /- [.008]
E = EMIT T ER
4. DIMENS IONAL T OLERANCES :
BONDING PADS :
WIDT H
&
LENGT H
OVERALL DIE:
GAT E
0.812
[.032]
EMITT ER
5.125 6.604
[.202] [.260]
WIDT H
&
LENGT H
2.045
[.081]
www.irf.com
10/16/02

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IRGC26B120KB IRGC26B120KBPBF
Description Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2 Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2
Is it Rohs certified? incompatible conform to
Maker Infineon Infineon
package instruction DIE-2 UNCASED CHIP, S-XUUC-N2
Reach Compliance Code unknown compliant
Collector-emitter maximum voltage 1200 V 1200 V
Configuration SINGLE SINGLE
JESD-30 code S-XUUC-N2 S-XUUC-N2
Number of components 1 1
Number of terminals 2 2
Package body material UNSPECIFIED UNSPECIFIED
Package shape SQUARE SQUARE
Package form UNCASED CHIP UNCASED CHIP
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
surface mount YES YES
Terminal form NO LEAD NO LEAD
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications MOTOR CONTROL MOTOR CONTROL
Transistor component materials SILICON SILICON
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