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IRGC26B120KBPBF

Description
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2
CategoryDiscrete semiconductor    The transistor   
File Size44KB,1 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance  
Download Datasheet Parametric Compare View All

IRGC26B120KBPBF Overview

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2

IRGC26B120KBPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeDIE
package instructionUNCASED CHIP, S-XUUC-N2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE
JESD-30 codeS-XUUC-N2
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperature40
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON

IRGC26B120KBPBF Preview

IRGC26B120KB
Features
•
•
•
•
•
PD - 94563
Die in Wafer Form
1200V
I
C(nom)
=25A
V
CE(on) typ.
=2.35V @
I
C(nom)
@ 25°C
Motor Control IGBT
Short Circuit Rated
150mm Wafer
Benefits
GEN5 Non Punch Through (NPT) Technology
Low V
CE(on)
10
µ
s Short Circuit Capability
Square RBSOA
Positive V
CE(on)
Temperature Coefficient
C
G
E
• Benchmark Efficiency for Motor Control Applications
• Rugged Transient Performance
• Excellent Current Sharing in Parallel Operation
Reference Standard IR Package Part: GB25XF120K
Electrical Characteristics (Wafer Form)
Parameter
Description
V
CE (on)
Collector-to-Emitter Saturation Voltage
V
(BR)CES
Colletor-to-Emitter Breakdown Voltage
V
GE(th)
I
CES
I
GES
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Guaranteed (min, max)
Test Conditions
1.54V min, 1.96V max I
C
= 10A, T
J
= 25°C, V
GE
= 15V
T
J
= 25°C, I
CES
= 250µA, V
GE
= 0V
1200V min
4.4V min, 6.0V max
10µA max
± 1.1µA max
V
GE
= V
CE
, T
J
=25°C, I
C
= 250µA
T
J
= 25°C, V
CE
= 1200V
T
J
= 25°C, V
GE
= +/-20V
Mechanical Data
Nominal Backmetal Composition, (Thickness)
Nominal Front Metal Composition, (Thickness)
Dimensions
Wafer Diameter
Wafer Thickness, Tolerance
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Recommended Die Attach Conditions
Al - Ti - Ni/V - Ag, (1kA - 1kA - 4kA - 6kA)
99% Al/1% Si, (4µm)
0.260" x 0.260"
150mm, with std. < 100 > flat
185µm, +/-15µm
01-5567
100µm
0.25mm diameter minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300°C
Die Outline
6.604
[.260]
5.205
[.205]
NOT ES :
1. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
2. CONT ROLLING DIMENS ION: [INCH].
3. LET T ER DES IGNAT ION:
S = S OURCE
G = GAT E
S K = S OURCE KELVIN
IS = CURRENT S ENS E
< 0.635 T OLERANCE = + /- 0.013
< [.0250] T OLERANCE = + /- [.0005]
> 0.635 T OLERANCE = + /- 0.025
> [.0250] T OLERANCE = + /- [.0010]
< 1.270 T OLERANCE = + /- 0.102
< [.050] T OLERANCE = + /- [.004]
> 1.270 T OLERANCE = + /- 0.203
> [.050] T OLERANCE = + /- [.008]
E = EMIT T ER
4. DIMENS IONAL T OLERANCES :
BONDING PADS :
WIDT H
&
LENGT H
OVERALL DIE:
GAT E
0.812
[.032]
EMITT ER
5.125 6.604
[.202] [.260]
WIDT H
&
LENGT H
2.045
[.081]
www.irf.com
10/16/02

IRGC26B120KBPBF Related Products

IRGC26B120KBPBF IRGC26B120KB
Description Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2 Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2
Is it lead-free? Lead free Contains lead
Is it Rohs certified? conform to incompatible
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code DIE DIE
package instruction UNCASED CHIP, S-XUUC-N2 UNCASED CHIP, S-XUUC-N2
Contacts 2 2
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Collector-emitter maximum voltage 1200 V 1200 V
Configuration SINGLE SINGLE
JESD-30 code S-XUUC-N2 S-XUUC-N2
Number of components 1 1
Number of terminals 2 2
Package body material UNSPECIFIED UNSPECIFIED
Package shape SQUARE SQUARE
Package form UNCASED CHIP UNCASED CHIP
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form NO LEAD NO LEAD
Terminal location UPPER UPPER
Maximum time at peak reflow temperature 40 NOT SPECIFIED
transistor applications MOTOR CONTROL MOTOR CONTROL
Transistor component materials SILICON SILICON
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