DTD143ECTP datasheet, PDF - EEWORLD Datasheet

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DTD143ECTP: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,; CategoryDiscrete semiconductor The transistor; File Size67KB，3 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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DTD143ECTP Overview

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,

DTD143ECTP Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	ROHM Semiconductor
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	47
JESD-30 code	R-PSIP-T3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

DTD143ECTP Preview

Transistors

Digital transistors (built-in resistors)

DTD143EK / DTD143ES / DTD143EC

FFeatures

1) Built-in bias resistors enable the

configuration of an inverter circuit

without connecting external input

resistors (see equivalent circuit).

2) The bias resistors consist of thin-

film resistors with complete isola-

tion to allow negative biasing of the

input. They also have the advan-

tage of almost completely eliminat-

ing parasitic effects.

3) Only the on / off conditions need to

be set for operation, making device

design easy.

FStructure

NPN digital transistor

(Built-in resistor type)

FExternal

dimensions (Units: mm)

(96-372-D143E)

460

Transistors

FAbsolute

maximum ratings (Ta = 25_C)

DTD143EK / DTD143ES / DTD143EC

FEquivalent

circuit

FElectrical

characteristics (Ta = 25_C)

FPackaging

specifications

461

Transistors

FElectrical

characteristic curves

DTD143EK / DTD143ES / DTD143EC

462

More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

DTD143ECTP Related Products

	DTD143ECTP	DTD143EST116
Description	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	ROHM Semiconductor	ROHM Semiconductor
package instruction	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Other features	DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1	DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.5 A	0.5 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	47	47
JESD-30 code	R-PSIP-T3	R-PDSO-G3
JESD-609 code	e1	e1
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	NO	YES
Terminal surface	TIN SILVER COPPER	TIN SILVER COPPER
Terminal form	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	DUAL
Maximum time at peak reflow temperature	10	10
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz

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