Data Sheet
AEC-Q101 Qualified
Band Switching Diode
DAN235EFH
Applications
High frequency switching
Dimensions
(Unit : mm)
Land
size figure
(Unit : mm)
1.0
0.5 0.5
0.15±0.05
1.6±0.2
0.3±0.1
0.05
0.8±0.1
1.6±0.2
Features
1)Ultra small mold type. (EMD3)
2)High reliability
0.7
(3)
0.7
0.7
0½0.1
0.2±0.1
-0.05
(2)
0.5
0.5
1.0±0.1
(1)
0.55±0.1
0.7±0.1
0.1Min
0.6
EMD3
0.6
Construction
Silicon epitaxial
Structure
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory)
Taping
specifications
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.1
φ1.5
0.1
0
0
1.75±0.1
0.3±0.1
3.5±0.05
1.8±0.2
5.5±0.2
1.8±0.1
φ0.5±0.1
0½0.1
8.0±0.2
0.9±0.2
Absolute
maximum ratings
(Ta=25°C)
Parameter
Symbol
Power dissipation
Pd
Reverse voltage (DC)
V
R
Junction temperature
Tj
Storage temperature
Tstg
Limits
150
35
125
55
to
125
Unit
mW
V
°C
°C
Electrical
characteristics
(Ta=25°C)
Parameter
Symbol
V
F
Forward voltage
Reverse current
Capacitance between terminals
Forward resistance
I
R
Ct
rf
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
1.0
10
1.2
0.9
Unit
V
nA
pF
Ω
Conditions
I
F
=10mA
V
R
=25V
V
R
=6V , f=1MHz
I
F
=2mA , f=100MHz
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.06 - Rev.C
1.3
DAN235EFH
Data Sheet
100
100
Ta=125℃
REVERSE CURRENT:IR(nA)
10
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
FORWARD CURRENT:IF(mA)
10
1
0.1
0.01
0.001
Ta=75℃
Ta=25℃
Ta=-25℃
10
Ta=75℃
Ta=125℃
1
1
Ta=25℃
0.1
Ta=-25℃
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1
0.0001
0
5
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
10
15
20
25
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
35
0.1
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
860
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
0.2
Ta=25℃
IF=10mA
n=30pcs
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
VF DISPERSION MAP
AVE:0.0285nA
Ta=25℃
VR=25V
n=30pcs
1
0.9
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
850
840
830
820
810
AVE:834.0mV
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
AVE:0.865pF
Ta=25℃
VR=6V
f=1MHz
n=10pcs
IR DISPERSION MAP
Ct DISPERSION MAP
20
PEAK SURGE
FORWARD CURRENT:IFSM(A)
100
1cyc
REVERSE RECOVERY TIME:trr(ns)
1
Ta=25℃
IF=0.1A
IR=0.1A
RL=100Ω
Irr=0.1*IR
n=10pcs
AVE:64.7ns
0.9
FORWARD OPERATING
RESISTANCE:rf(Ω)
15
Ifsm
8.3ms
80
60
40
20
0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
AVE:0.630Ω
Ta=25℃
f=100MHz
IF=2mA
n=10pcs
10
AVE:4.60A
5
0
IFSM DISPERSION MAP
trr DISPERSION MAP
FORWARD CURRENT:IF(mA)
rf DISPERSION MAP
100
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
100
1000
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
Rth(j-a)
10
10
100
Rth(j-c)
Mounted on epoxy board
IM=1mA
IF=10mA
1
Ifsm
8.3ms 8.3ms
1cyc
1
Ifsm
t
10
1ms
time
300us
0.1
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
0.1
0.1
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1
0.001
0.01
1
10
100
TIME:t(s)
Rth-t CHARACTERISTICS
0.1
1000
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.06 - Rev.C
DAN235EFH
Data Sheet
10
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
9
8
7
6
5
4
3
2
1
0
C=200pF
R=0Ω
AVE:1.06kV
AVE:7.02kV
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.06 - Rev.C
Notice
Notes
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