TELEFUNKEN Semiconductors
TLH.5800
High Efficiency LED, ø 5 mm Untinted Non-Diffused
Color
Yellow
Green
Pure green
Type
TLHY5800
TLHG5800
TLHP5800
Technology
GaAsP on GaP
GaP on GaP
GaP on GaP
Angle of Half Intensity
±
ö
4
°
Description
The TLH.5800 series was developed for standard applica-
tions which need a very small radiation angle or a very
high luminous intensity.
It is housed in a 5 mm untinted nondiffused plastic pack-
age. The very small viewing angle of these devices
provide a very high luminous intensity.
The yellow and green LEDs are categorized in luminous
intensity and additionally in wavelength groups.
That allows users to assemble LEDs with uniform appear-
ance.
94 8631
Features
D
D
D
D
D
D
D
Standard T-1
¾
package
Small mechanical tolerances
Suitable for DC and high peak current
Very small viewing angle
Very high intensity
Luminous intensity categorized
Yellow and green color categorized
Applications
Status lights
OFF / ON indicator
Lightpipe
Outdoor display
Medical instruments
Maintenance lights
Legend lights
Rev. A1: 01.06.1995
1 (8)
TLH.5800
Absolute Maximum Ratings
T
amb
= 25°C, unless otherwise specified
TLHY5800
,TLHG5800 ,TLHP5800
Parameter
Reverse voltage
DC forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Test Conditions
T
amb
≤
65
°
C
t
p
≤
10
m
s
T
amb
≤
65
°
C
Type
TELEFUNKEN Semiconductors
t
≤
5 s, 2 mm
from body
Symbol
V
R
I
F
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
6
30
1
100
100
–20 to +100
–55 to +100
260
350
Unit
V
mA
A
mW
°
C
°
C
°
C
°
C
K/W
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Yellow
(TLHY5800 )
Parameter
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
Green
(TLHG5800 )
Parameter
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
Test Conditions
I
F
= 20 mA, I
Vmin
/I
Vmax
≥
0.5
I
F
= 10 mA
I
F
= 10 mA
I
F
= 10 mA
I
F
= 20 mA
I
R
= 10
m
A
V
R
= 0, f = 1 MHz
Type
Symbol
I
V
l
d
l
p
ϕ
V
F
V
R
C
j
Min
400
562
Typ
700
565
±4
2.4
15
50
Max
575
Unit
mcd
nm
nm
deg
V
V
pF
Test Conditions
I
F
= 20 mA, I
Vmin
/I
Vmax
≥
0.5
I
F
= 10 mA
I
F
= 10 mA
I
F
= 10 mA
I
F
= 20 mA
I
R
= 10
m
A
V
R
= 0, f = 1 MHz
Type
Symbol
I
V
l
d
l
p
ϕ
V
F
V
R
C
j
Min
100
581
Typ
250
585
±4
2.4
15
50
Max
594
Unit
mcd
nm
nm
deg
V
V
pF
3
6
3
6
2 (8)
Rev. A1: 01.06.1995
TELEFUNKEN Semiconductors
Pure green
(TLHP5800 )
Parameter
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
Test Conditions
I
F
= 20 mA, I
Vmin
/I
Vmax
≥
0.5
I
F
= 10 mA
I
F
= 10 mA
I
F
= 10 mA
I
F
= 20 mA
I
R
= 10
m
A
V
R
= 0, f = 1 MHz
Type
Symbol
I
V
l
d
l
p
ϕ
V
F
V
R
C
j
Min
25
555
TLH.5800
Typ
85
555
±4
2.4
15
50
Max
565
Unit
mcd
nm
nm
deg
V
V
pF
3
6
Typical Characteristics
(T
amb
= 25
_
C, unless otherwise specified)
125
P
V
– Power Dissipation ( mW )
10000
T
amb
100
I
F
– Forward Current ( mA )
1000
t
p
/T=0.01
0.02
0.05
0.1
100
1
10
0.5
0.2
v
65°C
75
50
25
0
0
20
40
60
80
100
1
0.01
95 10025
0.1
1
10
100
95 10918
T
amb
– Ambient Temperature (
°C
)
t
p
– Pulse Length ( ms )
Figure 1. Power Dissipation vs. Ambient Temperature
60
I
F
– Forward Current ( mA )
50
40
30
20
10
0
0
95 10046
Figure 3. Forward Current vs. Pulse Length
0°
I
v rel
– Relative Luminous Intensity
10
°
20
°
30°
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
20
40
60
80
100
95 10022
T
amb
– Ambient Temperature (
°C
)
Figure 2. Forward Current vs. Ambient Temperature
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
Rev. A1: 01.06.1995
3 (8)
TLH.5800
1000
Yellow
100
t
p
/T=0.001
t
p
=10
m
s
I
v rel
– Relative Luminous Intensity
I
F
– Forward Current ( mA )
10
TELEFUNKEN Semiconductors
Yellow
1
10
0.1
1
0.1
0
95 10030
0.01
2
4
6
8
10
95 10033
1
10
I
F
– Forward Current ( mA )
100
V
F
– Forward Voltage ( V )
Figure 5. Forward Current vs. Forward Voltage
1.6
I
v rel
– Relative Luminous Intensity
Figure 8. Relative Luminous Intensity vs. Forward Current
1.2
I
v rel
– Relative Luminous Intensity
Yellow
1.2
Yellow
1.0
0.8
0.6
0.4
0.2
0
550
0.8
0.4
0
0
95 10031
I
F
=10mA
20
40
60
80
100
95 10039
570
590
610
630
650
T
amb
– Ambient Temperature (
°C
)
l
– Wavelength ( nm )
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
2.4
I
v rel
– Relative Luminous Intensity
Yellow
Figure 9. Relative Luminous Intensity vs. Wavelength
1000
I
F
– Forward Current ( mA )
Green
100
2.0
1.6
1.2
0.8
0.4
0
10
20
0.5
50
0.2
100
0.1
200
0.05
500
0.02
I
F
(mA)
t
p
/T
10
t
p
/T=0.001
t
p
=10
m
s
1
0.1
0
95 10034
2
4
6
8
10
95 10260
1
V
F
– Forward Voltage ( V )
Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Figure 10. Forward Current vs. Forward Voltage
4 (8)
Rev. A1: 01.06.1995
TELEFUNKEN Semiconductors
TLH.5800
1.2
I
v rel
– Relative Luminous Intensity
Green
1.0
0.8
0.6
0.4
0.2
0
520
95 10038
1.6
I
v rel
– Relative Luminous Intensity
Green
1.2
0.8
0.4
I
F
=10mA
0
20
40
60
80
100
0
95 10035
540
560
580
600
620
T
amb
– Ambient Temperature (
°C
)
l
– Wavelength ( nm )
Figure 11. Rel. Luminous Intensity vs. Ambient Temperature
2.4
I
v rel
– Relative Luminous Intensity
Green
Figure 14. Relative Luminous Intensity vs. Wavelength
100
Pure Green
I
F
– Forward Current ( mA )
2.0
1.6
1.2
0.8
0.4
0
10
20
0.5
50
0.2
100
0.1
200
0.05
500
0.02
I
F
(mA)
t
p
/T
10
1
0.1
0
95 9988
1
2
3
4
5
95 10263
1
V
F
– Forward Voltage ( V )
Figure 12. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
10
I
v rel
– Relative Luminous Intensity
I
v rel
– Relative Luminous Intensity
Green
1
Figure 15. Forward Current vs. Forward Voltage
2.0
Pure Green
1.6
1.2
0.1
0.8
0.4
0
0.01
1
95 10037
10
I
F
– Forward Current ( mA )
100
95 9991
0
20
40
60
80
100
T
amb
– Ambient Temperature (
°C
)
Figure 13. Relative Luminous Intensity vs. Forward Current
Figure 16. Rel. Luminous Intensity vs. Ambient Temperature
Rev. A1: 01.06.1995
5 (8)
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