ASJE1200R100Y-EL datasheet, PDF

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ASJE1200R100Y-EL: DescriptionPower Field-Effect Transistor, 17A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size249KB，7 Pages; ManufacturerMicross; Websitehttps://www.micross.com

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ASJE1200R100Y-EL Overview

Power Field-Effect Transistor, 17A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN

ASJE1200R100Y-EL Parametric

Parameter Name	Attribute value
Maker	Micross
Parts packaging code	TO-257AA
package instruction	FLANGE MOUNT, R-XSFM-P3
Contacts	3
Reach Compliance Code	compliant
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	1200 V
Maximum drain current (ID)	17 A
Maximum drain-source on-resistance	0.1 Ω
FET technology	JUNCTION
JEDEC-95 code	TO-257AA
JESD-30 code	R-XSFM-P3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	200 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	30 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON CARBIDE

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ADVANCED INFORMATION

Normally-OFF Trench Silicon

Carbide Power JFET

FEATURES:

Die Inside

• Hermetic TO-257 Packaging

• 200°C Maximum Operating Temperature (for 260

C Contact Factory)

• Available Screening:

- MIL-PRF-19500 Equivalent

- Space Level

- MIL-STD-750 Methods & Conditions

• Inherent Radiation Tolerance >100K TID

• Compatible with Standard Gate Driver ICs

• Positive Temperature Coefﬁcient for Ease of Paralleling

• Extremely Fast Switching with No “Tail”

Current at 150°C

• 1200 Volt Drain-Source Blocking Voltage

• RDS

(on)max

of 0.100

• Voltage Controlled

• Low Gate Charge

• Low Intrinsic Capacitance

SiC JFET

ASJE1200R100

μJ

Product Summary

1200

RDS

(ON)max

TS,typ

0.100

170

D (2,4)

G (1)

APPLICATIONS:

• Satellite Solar Inverters

• Mil Spec Power Supplies

- Switch Mode

- Uninterrupted

• Jet Engine Electronics

• Down-hole Electronics (Motor / Compressor Control)

TO-257

123

S (3)

Internal Schematic

Non-isolated tab version shown.

For isolated tab version, tab (4)

is No Connect.

MAXIMUM RATINGS

Parameter

Continuous Drain Current

Pulsed Drain Current

(1)

Short Circuit Withstand Time

Power Dissipation

Gate Source Voltage

Operating and Storage Temperature

Symbol

D, Tj=125

D, Tj=175

, T

j,stg

Conditions

= 125 °C

= 175 °C

= 25 °C

< 800 V, T

< 125 °C

= 25 °C

(2)

Value

136

15 to +15

55 to +200*

260

Unit

μS

sold

Lead Temperature for Soldering

1/8" from case < 10 s

(1) Limited by pulse width

(2) Rg

EXT

= 1 ohm, t

< 200ns, see Figure 5 for static conditions

* Contact Factory for 260

THERMAL CHARACTERISTICS

Value

Parameter

Thermal Resistance, junction to case

Thermal Resistance, junction to ambient

ASJE1200R100

Rev. 0.0 12/10

Symbol

th,JC

th,JA

Typ

Max

TBD

Unit

°C / W

For more products and

information, please visit our

website at www.micross.com

Micross Components reserves the right to change products or speciﬁcations without notice.

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