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SEMIX604GB176HDS_11

Description
Trench IGBT Modules
File Size556KB,6 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
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SEMIX604GB176HDS_11 Overview

Trench IGBT Modules

SEMiX604GB176HDs
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 2xI
Cnom
V
CC
= 1000 V
V
GE
20 V
V
CES
1700 V
T
j
= 150 °C
T
c
= 25 °C
T
c
= 80 °C
1700
567
402
400
800
-20 ... 20
T
j
= 125 °C
10
-55 ... 150
T
c
= 25 °C
T
c
= 80 °C
740
496
400
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
800
2700
-40 ... 150
T
terminal
= 80 °C
AC sinus 50Hz, t = 1 min
600
-40 ... 125
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMiX 4s
Trench IGBT Modules
SEMiX604GB176HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• UL recognised file no. E63532
®
V
GES
t
psc
T
j
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
Inverse diode
T
j
= 150 °C
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
per IGBT
Conditions
I
C
= 400 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
GE
= 15 V
V
GE
= 0 V
V
CE
= 1700 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
V
CC
= 1200 V
I
C
= 400 A
V
GE
= ±15 V
R
G on
= 3
R
G off
= 3
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
min.
typ.
2
2.5
1
0.9
2.5
3.9
max.
2.45
2.9
1.2
1.1
3.1
4.5
6.4
4
Unit
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
ns
ns
mJ
ns
ns
mJ
V
GE
=V
CE
, I
C
= 16 mA
T
j
= 25 °C
T
j
= 125 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
5.2
5.8
0.12
35.3
1.46
1.17
3732
1.88
360
65
215
900
165
165
0.058
K/W
GB
© by SEMIKRON
Rev. 2 – 23.03.2011
1

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