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Datasheet> All Categories > Discrete semiconductor> The transistor> FZT2907ATA
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FZT2907ATA

Description
Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size52KB，2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
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FZT2907ATA Overview

Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN

FZT2907ATA Parametric

Parameter NameAttribute value
MakerZetex Semiconductors
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.6 A
Collector-based maximum capacity8 pF
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Maximum off time (toff)110 ns
Maximum opening time (tons)50 ns
VCEsat-Max1.6 V

FZT2907ATA Preview

SOT223 PNP SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 4 – JUNE 1996
FEATURES
* 60 Volt V
CEO
* Fast switching
PARTMARKING DETAIL –
7
FZT2907
FZT2907A
C
FZT2907 – FZT2907
FZT2907A – FZT2907A
B
E
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
-40
-5
-600
1.5
-55 to +150
FMMT2907
FMMT2907A
-60
-60
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Emitter
Cut-Off Current
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer
Ratio
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
CBO
FZT2907
MIN.
-40
-60
-5
-50
-20
-20
-50
-0.4
-1.6
-1.3
-2.6
35
50
75
100
30
200
75
100
100
100
50
200
FZT2907A
MAX.
V
V
V
-50
-10
-10
-50
-0.4
-1.6
-1.3
-2.6
nA
nA
nA
V
V
V
V
I
C
=-10
µ
A, I
E
=0
I
C
=-10mA, I
B
=0*
I
E
=-10
µ
A, I
C
=0
V
CE
=-30V, V
BE
=-0.5V
V
CB
=-50V, I
E
=0
V
CB
=-50V, I
E
=0, T
amb
=150°C
V
CE
=-30V, V
BE
=-0.5V
I
C
=-150mA, I
B
=-15mA*
I
C
=-500mA, I
B
=-50mA*
I
C
=-150mA, I
B
=-15mA*
I
C
=-500mA, I
B
=-50mA*
I
C
=-0.1mA, V
CE
=-10V
I
C
=-1mA, V
CE
=-10V
I
C
=-10mA, V
CE
=-10V
I
C
=-150mA, V
CE
=-10V*
I
C
=-500mA, V
CE
=-10V*
MHz
I
C
=-50mA, V
CE
=-20V
f=100MHz
-60
-60
-5
UNIT CONDITIONS.
MAX. MIN.
µ
A
Base Cut-Off Current I
B
V
CE(sat)
V
BE(sat)
h
FE
300
300
Transition
Frequency
f
T
*Measured under pulsed conditions. Pulse width=300ms. Duty cycle
≤
2%
3 - 298
FZT2907
FZT2907A
SWITCHING CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
C
obo
C
ibo
t
on
t
off
FMMT2907
MIN.
Output Capacitance
Input Capacitance
Turn On Time
8
30
50
FMMT2907A
MIN.
8
30
50
UNIT
pF
pF
ns
CONDITIONS.
MAX.
MAX.
V
CB
=-10V, I
E
=0,
f=100KHz
V
BE
=-2V, I
C
=0
f=100KHz
V
CE
=-30V
I
C
=-150mA, I
B1
=-15mA
(See Turn On Circuit)
V
CE
=-6V, I
C
=-150mA
I
B1
= I
B2
=-15mA
(See Turn Off Circuit)
Turn Off Time
110
110
ns
TURN ON TIME – TEST CIRCUIT
-30V
200
Ω
0
-16V
50
Ω
1K
Ω
Scope:
Rise Time < 5 ns
Pulse width
<200ns
TURN OFF TIME – TEST CIRCUIT
15V
-6V
1K
Ω
37
Ω
0
-30V
50
Ω
1K
Ω
Scope:
Rise Time < 5 ns
Pulse width
<200ns
3 - 299
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