FZT2907ATC datasheet, PDF - EEWORLD Datasheet

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FZT2907ATC: DescriptionPower Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size65KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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FZT2907ATC Overview

Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN

FZT2907ATC Parametric

Parameter Name	Attribute value
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.6 A
Collector-based maximum capacity	8 pF
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Maximum off time (toff)	110 ns
Maximum opening time (tons)	50 ns
VCEsat-Max	1.6 V

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FZT2907ATC Related Products

	FZT2907ATC	FZT2907TA	FZT2907TC
Description	Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN	Power Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin	Power Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
Maker	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	0.6 A	0.6 A	0.6 A
Collector-based maximum capacity	8 pF	8 pF	8 pF
Collector-emitter maximum voltage	60 V	40 V	40 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	75	75
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Number of components	1	1	1
Number of terminals	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz
Maximum off time (toff)	110 ns	110 ns	110 ns
Maximum opening time (tons)	50 ns	50 ns	50 ns
VCEsat-Max	1.6 V	1.6 V	1.6 V
Is it Rohs certified?	-	conform to	conform to
JESD-609 code	-	e3	e3
Humidity sensitivity level	-	1	1
Peak Reflow Temperature (Celsius)	-	260	260
Terminal surface	-	MATTE TIN	MATTE TIN
Maximum time at peak reflow temperature	-	40	40
Base Number Matches	-	1	1

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