FHB1132P datasheet, PDF - EEWORLD Datasheet

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FHB1132P: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-243AA, TO-243, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size86KB，1 Pages; ManufacturerFenghua (HK) Electronics Ltd.

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FHB1132P Overview

Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-243AA, TO-243, 3 PIN

FHB1132P Parametric

Parameter Name	Attribute value
Maker	Fenghua (HK) Electronics Ltd.
Parts packaging code	SOT-89
package instruction	SMALL OUTLINE, R-PSSO-F3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	32 V
Configuration	SINGLE
Minimum DC current gain (hFE)	82
JEDEC-95 code	TO-243AA
JESD-30 code	R-PSSO-F3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.5 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
Transistor component materials	SILICON
Nominal transition frequency (fT)	140 MHz

FHB1132P Preview

Medium Power Transistor(PNP)

DESCRIPTION & FEATURES

概述及特點

1) Low

V

CE (sat)

= -0.2V(Typ)

(I

C

/

I

B

=-500mA/-50mA)

2) Complements the FHD1664

3) Epitaxial planar type,

PNP silicon transistor

FHB1132

SOT-89

PIN ASSIGNMENT

引腳說明

PIN NAME

FUNCTION

PIN NUMBER

引腳序號

管腳符號

功½

SOT-89

B

1

BASE

C

2

COLLECTOR

E

3

EMITTER

MAXIMUM RATINGS(T

a

=25℃)

最大額定值

CHARACTERISTIC

特性參數

Symbol

符號

Rating

額定值

Collector-Emitter Voltage

集電極-發射極電壓

-32

V

CEO

Collector-Base Voltage

集電極-基極電壓

V

CBO

-40

Emitter-Base Voltage

發射極-基極電壓

-5

V

EBO

Collector Current(DC)集電極電流-直流

-1

I

C

Collector Current(Pulse)集電極電流-脈衝

-2

I

CP

THERMAL CHARACTERISTICS

熱特性

CHARACTERISTIC

特性參數

Symbol

符號

Max

最大值

Collector Power Dissipation

集電極耗散功率

P

c

500

150，

T

J

Junction and Storage Temperature結溫和儲存溫度

T

stg

-55 ~150

DEVICE MARKING

打標

FHB1132P=BAP(82~180)，FHB1132Q=BAQ(120~270)，FHB1132R=BAR(180~390)

ELECTRICAL CHARACTERISTICS

電特性

(T

A

=25℃ unless otherwise noted

如無特殊說明，溫度為

25℃)

Symbol

Test Condition

Min

Type

Characteristic

特性參數

符號

測試條件

最小值典型值

Collector-Emitter Breakdown Voltage

Unit

單½

Vdc

Adc

Unit

單½

mW

℃

Max

最大值

—

-500

390

-0.5

—

30

Unit

單½

V

nA

集電極-發射極擊穿電壓

Collector-Base Breakdown Voltage

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

EBO

h

FE

V

CE

（

sat

）

f

T

C

Ob

I

C

=-1.0mA

I

C

=-50µA

I

E

=-50µA

V

CB

=-20V

V

EB

=-4V

V

CE

=-3V,I

C

=-100mA

I

C

=-500mA,I

B

=-50mA

V

CE

=-5V,I

E

=-50mA,

f = 30 MHz

V

CB

=-10V,I

E

=0,f=1MHZ

-32

-40

-5.0

—

82

—

-0.2

150

20

集電極-基極擊穿電壓

Emitter-Base Breakdown Voltage

發射極-基極擊穿電壓

Collector Cutoff Current

集電極截止電流

Emitter Cutoff Current

發射極截止電流

DC Current Gain

直流電流增益

Collector-Emitter Saturation

Voltage

集電極-發射極½和壓降

Transition Frequency

特徵頻率

Collect Output Capacitance

輸出電容

V

MH

Z

pF

1

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FHB1132P Related Products

	FHB1132P	FHB1132Q	FHB1132	FHB1132R
Description	Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-243AA, TO-243, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-243AA, TO-243, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-243AA, TO-243, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-243AA, TO-243, 3 PIN
Maker	Fenghua (HK) Electronics Ltd.	Fenghua (HK) Electronics Ltd.	Fenghua (HK) Electronics Ltd.	Fenghua (HK) Electronics Ltd.
Parts packaging code	SOT-89	SOT-89	SOT-89	SOT-89
package instruction	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3
Contacts	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A	1 A	1 A
Collector-emitter maximum voltage	32 V	32 V	32 V	32 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	82	120	82	180
JEDEC-95 code	TO-243AA	TO-243AA	TO-243AA	TO-243AA
JESD-30 code	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.5 W	0.5 W	0.5 W	0.5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT	FLAT
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	140 MHz	140 MHz	140 MHz	140 MHz

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