FXTA42STZ datasheet, PDF - EEWORLD Datasheet

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FXTA42STZ: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size26KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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FXTA42STZ Overview

Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

FXTA42STZ Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	IN-LINE, R-PSIP-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JESD-30 code	R-PSIP-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
VCEsat-Max	0.4 V

FXTA42STZ Preview

NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 1 SEPT 93

FEATURES

* 300 Volt V

CEO

APPLICATIONS

* Telephone dialler circuits

FXTA42

B

C

E

REFER TO MPSA42 FOR GRAPHS

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

j

:T

stg

E-Line

TO92 Compatible

VALUE

300

6

500

680

-55 to +175

UNIT

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

MIN.

300

6

0.1

0.5

0.9

25

40

50

6

3-64

MHz

pF

TYP.

MAX.

UNIT

V

µ

A

µ

A

CONDITIONS.

I

C

=100

µ

A, I

E

=0

I

C

=1mA, I

B

=0*

I

E

=100

µ

A, I

C

=0

V

CB

=200V, I

E

=0

V

EB

=6V, I

C

=0

I

C

=20mA, I

B

=2mA

I

C

=20mA, I

B

=2mA

I

C

=1mA, V

CE

=10V*

I

C

=10mA, V

CE

=10V*

I

C

=30mA, V

CE

=10V*

I

C

=10mA, V

CE

=20V

f=20MHz

V

CB

=20V, f=1MHz

Emitter Cut-Off Current I

EBO

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

V

CE(sat)

V

BE(sat)

V

Static Forward Current h

FE

Transfer Ratio

Transition

Frequency

Output Capacitance

f

T

C

obo

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FXTA42STZ Related Products

	FXTA42STZ	FXTA42STOA	FXTA42STOB
Description	Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors
package instruction	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	300 V	300 V	300 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	50	50	50
JESD-30 code	R-PSIP-W3	R-PSIP-W3	R-PSIP-W3
JESD-609 code	e0	e0	e0
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	200 °C	200 °C	200 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	50 MHz	50 MHz	50 MHz
VCEsat-Max	0.4 V	0.4 V	0.4 V

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