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FJN598JDD26Z

Description
Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size118KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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FJN598JDD26Z Overview

Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-92

FJN598JDD26Z Parametric

Parameter NameAttribute value
MakerFairchild
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Maximum drain current (ID)0.001 A
FET technologyJUNCTION
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
FJN598J
FJN598J
Capacitor Microphone Applications
• Especially Suited for use in Audio, Telephone Capacitor Microphones
• Excellent Voltage Characteristic
• Excellent Transient Characteristic
1
TO-92
1. Source 2. Gate 3. Drain
Si N-channel Junction FET
Absolute Maximum Ratings
T
a
=25°C
unless otherwise noted
Symbol
V
GDO
I
G
I
D
P
D
T
J
T
STG
Gate-Drain Voltage
Gate Current
Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-20
10
1
150
150
-55 ~ 150
Units
V
mA
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C
unless otherwise noted
Symbol
BV
GDO
V
GS
(off)
I
DSS
lY
FS
l
C
ISS
C
RSS
Parameter
Gate-Drain Breakdown Voltage
Gate-Source Cut-off Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Test Condition
I
G
= -100uA
V
DS
=5V, I
D
=1µA
V
DS
=5V, V
GS
=0
V
DS
=5V, V
GS
=0, f=1MHz
V
DS
=5V, V
GS
=0, f=1MHz
V
DS
=5V, V
GS
=0, f=1MHz
100
0.4
1.2
3.5
0.65
Min.
-20
-0.6
-1.5
800
Typ.
Max.
Units
V
V
µA
ms
pF
pF
I
DSS
Classification
Classification
I
DSS
(µA)
A
100 ~ 170
B
150 ~ 240
C
210 ~ 350
D
320 ~ 480
E
440 ~ 800
©2000 Fairchild Semiconductor International
Rev. A. June 2000
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