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PRELIMINARY DATA SHEET
LASER DIODE
NX8510UD Series
1 470 TO 1 610 nm FOR CWDM 2.5 Gb/s
InGaAsP MQW-DFB LASER DIODE TOSA
DESCRIPTION
The NX8510UD is a 1 470 to 1 610 nm Multiple Quantum Well (MQW)
structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical
sub-assembly) with InGaAs monitor PIN-PD in a receptacle type package
designed for SFF/SFP transceiver with LC duplex receptacle. This device is
ideal for 2.5 Gb/s CWDM application.
FEATURES
• Internal optical isolator
• Optical output power
• Peak emission wavelength
• Low threshold current
• Operating case temperature range
• Side mode suppression ratio
• InGaAs monitor PIN-PD
• Small package
P
f
= 2.0 mW
λ
p
= 1 470 to 1 610 nm (Based on CWDM)
l
th
= 10 mA TYP. @ T
C
= 25°C
T
C
=
−20
to +85°C
SMSR = 40 dB
φ
3.8 mm TOSA (Total length 12.0 mm MAX.)
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PL10434EJ02V0DS (2nd edition)
Date Published March 2004 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices 2003, 2004
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