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FRF9250D4

Description
Power Field-Effect Transistor, 14A I(D), 200V, 0.315ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
CategoryDiscrete semiconductor    The transistor   
File Size145KB,4 Pages
ManufacturerHarris
Websitehttp://www.harris.com/
Download Datasheet Parametric View All

FRF9250D4 Overview

Power Field-Effect Transistor, 14A I(D), 200V, 0.315ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

FRF9250D4 Parametric

Parameter NameAttribute value
MakerHarris
package instructionFLANGE MOUNT, S-MSFM-P3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresRADIATION HARDENED
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)14 A
Maximum drain-source on-resistance0.315 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeS-MSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Polarity/channel typeP-CHANNEL
Maximum power consumption environment125 W
Maximum pulsed drain current (IDM)42 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Transistor component materialsSILICON
Maximum off time (toff)936 ns
Maximum opening time (tons)344 ns
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