FS10VSH-06-T1 datasheet, PDF - EEWORLD Datasheet

FS10VSH-06-T1: DescriptionPower Field-Effect Transistor, 10A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size195KB，4 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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FS10VSH-06-T1 Overview

Power Field-Effect Transistor, 10A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN

Parameter Name	Attribute value
Maker	Mitsubishi
Parts packaging code	TO-220S
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	10 A
Maximum drain-source on-resistance	0.095 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	40 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

	FS10VSH-06-T1	FS10VSH-06-T2
Description	Power Field-Effect Transistor, 10A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN	Power Field-Effect Transistor, 10A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN
Maker	Mitsubishi	Mitsubishi
Parts packaging code	TO-220S	TO-220S
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	4	4
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V
Maximum drain current (ID)	10 A	10 A
Maximum drain-source on-resistance	0.095 Ω	0.095 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSSO-G2
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	40 A	40 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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