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FRM430D4

Description
Power Field-Effect Transistor, 3A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
CategoryDiscrete semiconductor    The transistor   
File Size57KB,1 Pages
ManufacturerHarris
Websitehttp://www.harris.com/
Download Datasheet Parametric View All

FRM430D4 Overview

Power Field-Effect Transistor, 3A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

FRM430D4 Parametric

Parameter NameAttribute value
MakerHarris
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknown
Other featuresRADIATION HARDENED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)3 A
Maximum drain-source on-resistance2.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment75 W
Maximum pulsed drain current (IDM)9 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
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