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FD2400R17KF6CB2

Description
Insulated Gate Bipolar Transistor, 3800A I(C), 1700V V(BR)CES, N-Channel
CategoryDiscrete semiconductor    The transistor   
File Size121KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

FD2400R17KF6CB2 Overview

Insulated Gate Bipolar Transistor, 3800A I(C), 1700V V(BR)CES, N-Channel

FD2400R17KF6CB2 Parametric

Parameter NameAttribute value
MakerInfineon
package instruction,
Reach Compliance Codecompliant
Maximum collector current (IC)2400 A
Collector-emitter maximum voltage1700 V
Gate-emitter maximum voltage20 V
Number of components1
Maximum operating temperature125 °C
Maximum power dissipation(Abs)19200 W
VCEsat-Max3.1 V

FD2400R17KF6CB2 Preview

Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ2400R17KF6C B2
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I
2
t - value, Diode
Isolations-Prüfspannung
insulation test voltage
tp = 1 ms
T
C
= 80 °C
T
C
= 25 °C
t
P
= 1 ms, T
C
= 80°C
V
CES
I
C,nom.
I
C
I
CRM
1700
2400
3800
4800
V
A
A
A
T
C
=25°C, Transistor
P
tot
19,2
kW
V
GES
+/- 20V
V
I
F
2400
A
I
FRM
4800
A
V
R
= 0V, t
p
= 10ms, T
Vj
= 125°C
2
It
1500
kA
2
s
RMS, f = 50 Hz, t = 1 min.
V
ISOL
4
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
I
C
= 2400A, V
GE
= 15V, T
vj
= 25°C
I
C
= 2400A, V
GE
= 15V, T
vj
= 125°C
I
C
= 190mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE(th)
4,5
V
CE sat
min.
typ.
2,6
3,1
5,5
max.
3,1
3,6
6,5
V
V
V
V
GE
= -15V ... +15V
Q
G
29
µC
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
ies
160
nF
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
V
CE
= 1700V, V
GE
= 0V, T
vj
= 25°C
V
CE
= 1700V, V
GE
= 0V, T
vj
= 125°C
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
C
res
I
CES
8
0,06
30
4,5
240
400
nF
mA
mA
nA
I
GES
prepared by: Alfons Wiesenthal
approved by: Christoph Lübke; 10.11.2000
date of publication: 10.11.2000
revision: serie
1(8)
FZ2400R17KF6C B2
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ2400R17KF6C B2
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
I
C
= 2400, V
CE
= 900V
V
GE
= ±15V, R
G
= 0,6Ω, T
vj
= 25°C
V
GE
= ±15V, R
G
= 0,6Ω, T
vj
= 125°C
Anstiegszeit (induktive Last)
rise time (inductive load)
I
C
= 2400, V
CE
= 900V
V
GE
= ±15V, R
G
= 0,6Ω, T
vj
= 25°C
V
GE
= ±15V, R
G
= 0,6Ω, T
vj
= 125°C
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
I
C
= 2400, V
CE
= 900V
V
GE
= ±15V, R
G
= 0,6Ω, T
vj
= 25°C
V
GE
= ±15V, R
G
= 0,6Ω, T
vj
= 125°C
Fallzeit (induktive Last)
fall time (inductive load)
I
C
= 2400, V
CE
= 900V
V
GE
= ±15V, R
G
= 0,6Ω, T
vj
= 25°C
V
GE
= ±15V, R
G
= 0,6Ω, T
vj
= 125°C
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
Modulinduktivität
stray inductance module
Modulleitungswiderstand, Anschlüsse - Chip
module lead resistance, terminals - chip
pro Zweig / per arm
I
C
= 2400A, V
CE
= 900V, V
GE
= 15V
R
G
= 0,6Ω, T
vj
= 125°C, L
S
= 50nH
I
C
= 2400A, V
CE
= 900V, V
GE
= 15V
R
G
= 0,6Ω, T
vj
= 125°C, L
S
= 50nH
t
P
10µsec, V
GE
15V
T
Vj
≤125°C,
V
CC
=1000V, V
CEmax
=V
CES
-L
sCE
·dI/dt
I
SC
L
sCE
9600
10
A
nH
E
off
1060
mWs
E
on
750
mWs
t
f
0,18
0,19
µs
µs
t
d,off
1,5
1,5
µs
µs
t
r
0,23
0,23
µs
µs
t
d,on
0,3
0,3
µs
µs
min.
typ.
max.
R
CC´+EE´
0,06
mΩ
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
I
F
= 2400A, V
GE
= 0V, T
vj
= 25°C
I
F
= 2400A, V
GE
= 0V, T
vj
= 125°C
I
F
= 2400A, - di
F
/dt = 11000A/µsec
V
R
= 900V, VGE = -10V, T
vj
= 25°C
V
R
= 900V, VGE = -10V, T
vj
= 125°C
Sperrverzögerungsladung
recovered charge
I
F
= 2400A, - di
F
/dt = 11000A/µsec
V
R
= 900V, VGE = -10V, T
vj
= 25°C
V
R
= 900V, VGE = -10V, T
vj
= 125°C
Abschaltenergie pro Puls
reverse recovery energy
I
F
= 2400A, - di
F
/dt =11000A/µsec
V
R
= 900V, VGE = -10V, T
vj
= 25°C
V
R
= 900V, VGE = -10V, T
vj
= 125°C
E
rec
320
600
mWs
mWs
Q
r
530
960
µAs
µAs
I
RM
1750
2200
A
A
V
F
min.
typ.
2,1
2,1
max.
2,5
2,5
V
V
2(8)
FZ2400R17KF6C B2
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ2400R17KF6C B2
Thermische Eigenschaften / Thermal properties
min.
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Transistor / transistor, DC
Diode/Diode, DC
pro Modul / per module
λ
Paste
= 1 W/m*K /
λ
grease
= 1 W/m*K
R
thCK
0,006
R
thJC
typ.
max.
0,007
0,012
K/W
K/W
K/W
T
vj
150
°C
T
op
-40
125
°C
T
stg
-40
125
°C
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
Kriechstrecke
creepage distance
Luftstrecke
clearance
CTI
comperative tracking index
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque
Gewicht
weight
terminals M4
terminals M8
G
1500
min.
M1
AlN
32
mm
20
mm
>400
5
Nm
M2
2
8 - 10
Nm
Nm
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
3(8)
FZ2400R17KF6C B2
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ2400R17KF6C B2
Ausgangskennlinie (typisch)
Output characteristic (typical)
5000
4500
4000
3500
I
C
= f (V
CE
)
V
GE
= 15V
I
C
[A]
3000
2500
2000
1500
1000
500
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
Tj = 25°C
Tj = 125°C
V
CE
[V]
Ausgangskennlinienfeld (typisch)
Output characteristic (typical)
5000
4500
4000
3500
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9V
VGE = 8V
I
C
= f (V
CE
)
T
vj
= 125°C
I
C
[A]
3000
2500
2000
1500
1000
500
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
V
CE
[V]
4(8)
FZ2400R17KF6C B2
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ2400R17KF6C B2
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
I
C
= f (V
GE
)
V
CE
= 20V
5000
4500
4000
3500
Tj = 25°C
Tj = 125°C
I
C
[A]
3000
2500
2000
1500
1000
500
0
5
6
7
8
9
10
11
12
13
V
GE
[V]
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
5000
4500
Tj = 25°C
I
F
= f (v
F
)
4000
3500
Tj = 125°C
I
F
[A]
3000
2500
2000
1500
1000
500
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
V
F
[V]
5(8)
FZ2400R17KF6C B2
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