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SK50GH12T4T

Description
IGBT module
CategoryDiscrete semiconductor    The transistor   
File Size858KB,6 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Environmental Compliance
Download Datasheet Parametric View All

SK50GH12T4T Overview

IGBT module

SK50GH12T4T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSEMIKRON
package instructionFLANGE MOUNT, R-PUFM-X20
Contacts20
Manufacturer packaging codeCASE T84
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)75 A
Collector-emitter maximum voltage1200 V
ConfigurationBRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-emitter maximum voltage20 V
JESD-30 codeR-PUFM-X20
Number of components4
Number of terminals20
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
VCEsat-Max2 V
SK50GH12T4T
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SEMITOP
®
4
IGBT module
SK50GH12T4T
Inverse Diode
Module
Target Data
Features
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Typical Applications*
GH-T
1
27-04-2009 DIL
© by SEMIKRON

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Index Files: 1982  1537  2355  1449  23  40  31  48  30  1 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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