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F052179-4061

Description
Power Field-Effect Transistor, 3A I(D), 500V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3
CategoryDiscrete semiconductor    The transistor   
File Size82KB,1 Pages
ManufacturerSHINDENGEN
Websitehttps://www.shindengen.com
Download Datasheet Parametric View All

F052179-4061 Overview

Power Field-Effect Transistor, 3A I(D), 500V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3

F052179-4061 Parametric

Parameter NameAttribute value
MakerSHINDENGEN
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknown
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)3 A
Maximum drain-source on-resistance2.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Transistor component materialsSILICON
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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