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FQP7N20LJ69Z

Description
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size557KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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FQP7N20LJ69Z Overview

Power Field-Effect Transistor, 6.5A I(D), 200V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN

FQP7N20LJ69Z Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)73 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)6.5 A
Maximum drain-source on-resistance0.75 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)26 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
FQP7N20L
December 2000
QFET
FQP7N20L
200V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state
resistance,
provide
superior
switching
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for high efficiency switching DC/DC converters,
switch mode power supplies, and motor control.
TM
Features
6.5A, 200V, R
DS(on)
= 0.75Ω @V
GS
= 10 V
Low gate charge ( typical 6.8 nC)
Low Crss ( typical 8.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Low level gate drive requirement allowing direct
operation from logic drivers
D
!
"
G
G
!
DS
! "
"
"
TO-220
FQP Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQP7N20L
200
6.5
4.11
26
±
20
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
73
6.5
6.3
5.5
63
0.51
-55 to +150
300
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.5
--
Max
1.98
--
62.5
Units
°C/W
°C/W
°C/W
©2000 Fairchild Semiconductor International
Rev. A2, December 2000

FQP7N20LJ69Z Related Products

FQP7N20LJ69Z
Description Power Field-Effect Transistor, 6.5A I(D), 200V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN
Maker Fairchild
Parts packaging code SFM
package instruction FLANGE MOUNT, R-PSFM-T3
Contacts 3
Reach Compliance Code unknown
ECCN code EAR99
Avalanche Energy Efficiency Rating (Eas) 73 mJ
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 200 V
Maximum drain current (ID) 6.5 A
Maximum drain-source on-resistance 0.75 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3
Number of components 1
Number of terminals 3
Operating mode ENHANCEMENT MODE
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form FLANGE MOUNT
Polarity/channel type N-CHANNEL
Maximum pulsed drain current (IDM) 26 A
Certification status Not Qualified
surface mount NO
Terminal form THROUGH-HOLE
Terminal location SINGLE
transistor applications SWITCHING
Transistor component materials SILICON
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