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PCHMB200A6A

Description
200A 600V
File Size126KB,4 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
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PCHMB200A6A Overview

200A 600V

IGBT
M½½½½½−C½½½½½½
□ 回 路 図 :
CIRCUIT
200 A,
600V
□ 外 ½ 寸 法 図
PCHMB200A6A
OUTLINE DRAWING
Dimension:[mm½
最 大 定 格 :
MAXIMUM
I½½½
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
RATINGS
(T
=25℃)
S½½½½½
CES
GES
DC
1½½
重量:320½
R½½½½ V½½½½
600
±20
200
400
780
−40∼+150
−40∼+125
2,500
3(30.6)
2(20.4)
M½½.
4.0
T½½.
2.1
20,000
0.15
0.25
0.20
0.45
U½½½
(RMS)
N・½
(kgf½cm)
ゲート・エミッタ間電圧
Gate-Emitter Voltage
Collector Current
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
C
CP
C
j
stg
iso
tor
(Terminal to Base AC,1minute)
Module Base to Heatsink
Busbar to Main Terminal
Isolation Voltage
締 め 付 け ト ル ク
Mounting Torque
Collector-Emitter Cut-Off Current
CHARACTERISTICS
電 気 的 特 性 :
ELECTRICAL CHARACTERISTICS
(T
=25℃)
C½½½½½½½½½½½½½
S½½½½½ T½½½ C½½½½½½½½
コ レ ク タ 遮 断 電 流
CES
CE
= 600V, V
GE
= 0V
ゲ ー ト 漏 れ 電 流
GES
CE(sat)
GE(th)
ies
間 Rise
Time
M½½. U½½½
2.0
1.0
2.6
8.0
0.30
0.40
0.35
0.70
½A
µA
½F
µ½
Gate-Emitter Leakage Current
GE
=
±20V,
CE
= 0V
C
= 200A, V
GE
= 15V
CE
= 5V, I
C
= 200mA
CES
= 10V, V
GE
= 0V,½= 1MHz
CC
L
G
GE
=
=
=
=
300V
3Ω
3.6Ω
±15V
コレクタ・エミッタ間½和電圧
Collector-Emitter Saturation Voltage
ゲートし きい値 電圧
Gate-Emitter Threshold Voltage
Input Capacitance
ス イ ッ チ ン グ 時 間
ターンオン時間 Turn-on Time
Switching Time
下 降 時 間 Fall
Time
ターンオフ時間 Turn-off Time
½
r
½
on
½
f
½
off
□フリーホイーリングダイオードの 特 性:
FREE WHEELING DIODE RATINGS & CHARACTERISTICS
(T
=25℃)
フリーホイーリングダイオードの
WHEELING
I½½½
S½½½½½
R½½½½ V½½½½
U½½½
DC
F
200
Forward Current
1½½
FM
400
C½½½½½½½½½½½½½
S½½½½½
F
½
rr
T½½½ C½½½½½½½½
F
= 200A, V
GE
= 0V
F
= 200A, V
GE
= -10V
½i/½t = 200A/µs
M½½.
T½½.
1.9
M½½. U½½½
2.4
µ½
Peak Forward Voltage
Reverse Recovery Time
0.15 0.25
熱 的 特 性 :
THERMAL CHARACTERISTICS
C½½½½½½½½½½½½½
S½½½½½ T½½½ C½½½½½½½½
IGBT
th(j-c)
Junction to Case
Thermal Impedance
D ½ ½
½ ½
M½½.
T½½.
M½½. U½½½
0.16
℃/W
0.38

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